Fast noise-resistant control of donor nuclear spin qubits in silicon

• URL: http://arxiv.org/abs/2001.10029v2
• Date: Wed, 20 May 2020 20:21:45 GMT
• Title: Fast noise-resistant control of donor nuclear spin qubits in silicon
• Authors: James Simon, F. A. Calderon-Vargas, Edwin Barnes, Sophia E. Economou
• Abstract summary: A high degree of controllability and long coherence time make the nuclear spin of a phosphorus donor in isotopically purified silicon a promising candidate for a quantum bit. We present a simple method to implement fast, high-fidelity arbitrary single- and two-qubit gates in the absence of charge noise.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: A high degree of controllability and long coherence time make the nuclear spin of a phosphorus donor in isotopically purified silicon a promising candidate for a quantum bit. However, long-distance two-qubit coupling and fast, robust gates remain outstanding challenges for these systems. Here, following recent proposals for long-distance coupling via dipole-dipole interactions, we present a simple method to implement fast, high-fidelity arbitrary single- and two-qubit gates in the absence of charge noise. Moreover, we provide a method to make the single-qubit gates robust to moderate levels of charge noise to well within an error bound of $10^{-3}$.

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