Bandgap Control in Two-Dimensional Semiconductors via Coherent Doping of Plasmonic Hot Electrons

• URL: http://arxiv.org/abs/2003.03694v1
• Date: Sun, 8 Mar 2020 01:10:11 GMT
• Title: Bandgap Control in Two-Dimensional Semiconductors via Coherent Doping of Plasmonic Hot Electrons
• Authors: Yu-Hui Chen, Ronnie R. Tamming, Kai Chen, Zhepeng Zhang, Yanfeng Zhang, Justin M. Hodgkiss, Richard J. Blaikie, Boyang Ding, Min Qiu
• Abstract summary: We show for the first time a widely tunable bandgap (renormalisation up to 650 meV at room-temperature) in two-dimensional (2D) semiconductors by coherently doping the lattice with plasmonic hot electrons. Our findings provide an innovative effective measure to engineer optical responses of 2D semiconductors, allowing a great flexiblity in design and optimisation of photonic and optoelectronic devices.
• Score: 16.473409196165278
• License: http://creativecommons.org/publicdomain/zero/1.0/
• Abstract: Bandgap control is of central importance for semiconductor technologies. The traditional means of control is to dope the lattice chemically, electrically or optically with charge carriers. Here, we demonstrate for the first time a widely tunable bandgap (renormalisation up to 650 meV at room-temperature) in two-dimensional (2D) semiconductors by coherently doping the lattice with plasmonic hot electrons. In particular, we integrate tungsten-disulfide (WS$_2$) monolayers into a self-assembled plasmonic crystal, which enables coherent coupling between semiconductor excitons and plasmon resonances. Accompanying this process, the plasmon-induced hot electrons can repeatedly fill the WS$_2$ conduction band, leading to population inversion and a significant reconstruction in band structures and exciton relaxations. Our findings provide an innovative and effective measure to engineer optical responses of 2D semiconductors, allowing a great flexiblity in design and optimisation of photonic and optoelectronic devices.

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