Comparison of Dielectric Loss in Titanium Nitride and Aluminum Superconducting Resonators

• URL: http://arxiv.org/abs/2007.07338v1
• Date: Tue, 14 Jul 2020 20:20:22 GMT
• Title: Comparison of Dielectric Loss in Titanium Nitride and Aluminum Superconducting Resonators
• Authors: Alexander Melville, Greg Calusine, Wayne Woods, Kyle Serniak, Evan Golden, Bethany M. Niedzielski, David K. Kim, Arjan Sevi, Jonilyn L. Yoder, Eric A. Dauler, William D. Oliver
• Abstract summary: Lossy dielectrics are a significant source of decoherence in superconducting quantum circuits. We fabricate isotropically trenched resonators to accentuate a specific dielectric region's contribution to resonator quality factor. We evaluate the quality factor of each TiN resonator geometry with and without a post-process hydrofluoric (HF) etch, and find that it reduced losses from the substrate-air interface.
• Score: 45.82374977939355
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Lossy dielectrics are a significant source of decoherence in superconducting quantum circuits. In this report, we model and compare the dielectric loss in bulk and interfacial dielectrics in titanium nitride (TiN) and aluminum (Al) superconducting coplanar waveguide (CPW) resonators. We fabricate isotropically trenched resonators to produce a series of device geometries that accentuate a specific dielectric region's contribution to resonator quality factor. While each dielectric region contributes significantly to loss in TiN devices, the metal-air interface dominates the loss in the Al devices. Furthermore, we evaluate the quality factor of each TiN resonator geometry with and without a post-process hydrofluoric (HF) etch, and find that it reduced losses from the substrate-air interface, thereby improving the quality factor.

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