Engineering telecom single-photon emitters in silicon for scalable quantum photonics

• URL: http://arxiv.org/abs/2008.09425v1
• Date: Fri, 21 Aug 2020 11:34:38 GMT
• Title: Engineering telecom single-photon emitters in silicon for scalable quantum photonics
• Authors: M. Hollenbach, Y. Berenc\'en, U. Kentsch, M. Helm, G. V. Astakhov
• Abstract summary: We create and isolate single-photon emitters with a high brightness approaching $105$ counts per second in commercial silicon-on-insulator (SOI) wafers. Our results provide a route towards the implementation of quantum processors, repeaters and sensors compatible with the present-day silicon technology.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: We create and isolate single-photon emitters with a high brightness approaching $10^5$ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the carbon-related color centers in silicon, the so-called G center, allowing purification with the $^{12}$C and $^{28}$Si isotopes. Furthermore, we envision a concept of a highly-coherent scalable quantum photonic platform, where single-photon sources, waveguides and detectors are integrated on a SOI chip. Our results provide a route towards the implementation of quantum processors, repeaters and sensors compatible with the present-day silicon technology.

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