Electrically-triggered spin-photon devices in silicon

• URL: http://arxiv.org/abs/2501.10597v1
• Date: Fri, 17 Jan 2025 23:08:54 GMT
• Title: Electrically-triggered spin-photon devices in silicon
• Authors: Michael Dobinson, Camille Bowness, Simon A. Meynell, Camille Chartrand, Elianor Hoffmann, Melanie Gascoine, Iain MacGilp, Francis Afzal, Christian Dangel, Navid Jahed, Michael L. W. Thewalt, Stephanie Simmons, Daniel B. Higginbottom,
• Abstract summary: We electrically excite the silicon T centre in integrated optoelectronic devices that combine nanophotonic waveguides and cavities with p-i-n diodes. We observe single-photon electroluminescence from a cavity-coupled T centre with $92(8)%$ fidelity. These findings present a new telecommunications band light source for silicon and a highly parallel control method for T centre quantum processors.
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• Abstract: Quantum networking and computing technologies demand scalable hardware with high-speed control for large systems of quantum devices. Solid-state platforms have emerged as promising candidates, offering scalable fabrication for a wide range of qubits. Architectures based on spin-photon interfaces allow for highly-connected quantum networks over photonic links, enabling entanglement distribution for quantum networking and distributed quantum computing protocols. With the potential to address these demands, optically-active spin defects in silicon are one proposed platform for building quantum technologies. Here, we electrically excite the silicon T centre in integrated optoelectronic devices that combine nanophotonic waveguides and cavities with p-i-n diodes. We observe single-photon electroluminescence from a cavity-coupled T centre with $g^{(2)}(0)=0.05(2)$. Further, we use the electrically-triggered emission to herald the electron spin state, initializing it with $92(8)\%$ fidelity. This shows, for the first time, electrically-injected single-photon emission from a silicon colour centre and a new method of electrically-triggered spin initialization. These findings present a new telecommunications band light source for silicon and a highly parallel control method for T centre quantum processors, advancing the T centre as a versatile defect for scalable quantum technologies.

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