Quantum Sensing of Insulator-to-Metal Transitions in a Mott Insulator
- URL: http://arxiv.org/abs/2009.02886v1
- Date: Mon, 7 Sep 2020 04:38:27 GMT
- Title: Quantum Sensing of Insulator-to-Metal Transitions in a Mott Insulator
- Authors: Nathan J. McLaughlin, Yoav Kalcheim, Albert Suceava, Hailong Wang,
Ivan K. Schuller and Chunhui Rita Du
- Abstract summary: Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications.
We report on NV-based local sensing of the electrically driven insulator-to-metal transition (IMT) in a proximal Mott insulator.
- Score: 0.0
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond,
have attracted tremendous interest for quantum sensing, network, and computing
applications due to their excellent quantum coherence and remarkable
versatility in a real, ambient environment. Taking advantage of these
strengths, we report on NV-based local sensing of the electrically driven
insulator-to-metal transition (IMT) in a proximal Mott insulator. We studied
the resistive switching properties of both pristine and ion-irradiated VO2 thin
film devices by performing optically detected NV electron spin resonance
measurements. These measurements probe the local temperature and magnetic field
in electrically biased VO2 devices, which are in agreement with the global
transport measurement results. In pristine devices, the electrically-driven IMT
proceeds through Joule heating up to the transition temperature while in
ion-irradiated devices, the transition occurs non-thermally, well below the
transition temperature. Our results provide the first direct evidence for
non-thermal electrically induced IMT in a Mott insulator, highlighting the
significant opportunities offered by NV quantum sensors in exploring nanoscale
thermal and electrical behaviors in Mott materials.
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