Inter- and intra-band Coulomb interactions between holes in silicon
nanostructures
- URL: http://arxiv.org/abs/2010.01332v2
- Date: Fri, 1 Oct 2021 16:24:07 GMT
- Title: Inter- and intra-band Coulomb interactions between holes in silicon
nanostructures
- Authors: Andrea Secchi, Laura Bellentani, Andrea Bertoni, and Filippo Troiani
- Abstract summary: We present a derivation of the interaction Hamiltonian for holes in silicon within the six-band envelope-function scheme.
The scattering processes caused by the Coulomb interaction are shown to be both intraband and interband.
In the long-range limit, the effective potential tends to the screened Coulomb potential, and becomes purely intraband.
- Score: 0.0
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: We present a full derivation of the interaction Hamiltonian for holes in
silicon within the six-band envelope-function scheme, which appropriately
describes the valence band close to the $\boldsymbol{\Gamma}$ point. The full
structure of the single-hole eigenstates is taken into account, including the
Bloch part. The scattering processes caused by the Coulomb interaction are
shown to be both intraband and interband, the latter being mostly short-ranged.
In the asymptotic long-range limit, the effective potential tends to the
screened Coulomb potential, and becomes purely intraband, as assumed in
previous models. We apply our model to compute the excitation spectra of two
interacting holes in prototypical silicon quantum dots, taking into account
different dielectric environments. It is shown that, in the highly screened
regime, short-range interactions (both intra- and inter-band) can be very
relevant, while they lose importance when there is no screening other than the
one proper of the bulk silicon crystal. In the latter case, we predict the
formation of hole Wigner molecules.
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