Radio frequency reflectometry in silicon-based quantum dots

• URL: http://arxiv.org/abs/2012.14560v2
• Date: Thu, 7 Jan 2021 01:45:51 GMT
• Title: Radio frequency reflectometry in silicon-based quantum dots
• Authors: Y.-Y. Liu, S. G. J. Philips, L. A. Orona, N. Samkharadze, T. McJunkin, E. R. MacQuarrie, M. A. Eriksson, L. M. K. Vandersypen, A. Yacoby
• Abstract summary: We focus on the implementation of RF readout in accumulation-mode gate-defined quantum dots. We demonstrate that these methods enable high-performance charge readout in Si/SiGe quantum dots, achieving a fidelity of 99.9% for a measurement time of 1 $mu$s.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a second by off-chip changes. We demonstrate that these methods enable high-performance charge readout in Si/SiGe quantum dots, achieving a fidelity of 99.9% for a measurement time of 1 $\mu$s.

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