Superradiance of Spin Defects in Silicon Carbide for Maser Applications
- URL: http://arxiv.org/abs/2203.00329v2
- Date: Fri, 6 May 2022 19:43:18 GMT
- Title: Superradiance of Spin Defects in Silicon Carbide for Maser Applications
- Authors: Andreas Gottscholl, Maximilian Wagenh\"ofer, Manuel Klimmer, Selina
Scherbel, Christian Kasper, Valentin Baianov, Georgy V. Astakhov, Vladimir
Dyakonov, Andreas Sperlich
- Abstract summary: A new generation of masers has been invented based on optically pumped spin states in pentacene and diamond.
We pave the way for masers based on spin S = 3/2 silicon vacancy (V$_Si$) defects in silicon carbide (SiC) to overcome the microwave generation threshold.
- Score: 0.0
- License: http://creativecommons.org/licenses/by/4.0/
- Abstract: Masers as telecommunication amplifiers have been known for decades, yet their
application is strongly limited due to extreme operating conditions requiring
vacuum techniques and cryogenic temperatures. Recently, a new generation of
masers has been invented based on optically pumped spin states in pentacene and
diamond. In this study, we pave the way for masers based on spin S = 3/2
silicon vacancy (V$_{Si}$) defects in silicon carbide (SiC) to overcome the
microwave generation threshold and discuss the advantages of this highly
developed spin hosting material. To achieve population inversion, we optically
pump the V$_{Si}$ into their $m_S$ = $\pm$1/2 spin sub-states and additionally
tune the Zeeman energy splitting by applying an external magnetic field. In
this way, the prerequisites for stimulated emission by means of resonant
microwaves in the 10 GHz range are fulfilled. On the way to realising a maser,
we were able to systematically solve a series of subtasks that improved the
underlying relevant physical parameters of the SiC samples. Among others, we
investigated the pump efficiency as a function of the optical excitation
wavelength and the angle between the magnetic field and the defect symmetry
axis in order to boost the population inversion factor, a key figure of merit
for the targeted microwave oscillator. Furthermore, we developed a high-Q
sapphire microwave resonator (Q ~ 10$^4$ - 10$^5$) with which we find
superradiant stimulated microwave emission. In summary, SiC with optimized spin
defect density and thus spin relaxation rates is well on its way of becoming a
suitable maser gain material with wide-ranging applications.
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