A Backside-Illuminated Charge-Focusing Silicon SPAD with Enhanced Near-Infrared Sensitivity

• URL: http://arxiv.org/abs/2203.01560v1
• Date: Thu, 3 Mar 2022 08:19:20 GMT
• Title: A Backside-Illuminated Charge-Focusing Silicon SPAD with Enhanced Near-Infrared Sensitivity
• Authors: Edward Van Sieleghem, Gauri Karve, Koen De Munck, Andrea Vinci, Celso Cavaco, Andreas S\"uss, Chris Van Hoof, Jiwon Lee
• Abstract summary: detector contains a 2 $mu$m wide multiplication region with a spherically-uniform electric field peak enforced by field-line crowding. Device has a pitch of 15 $mu$m, which has the potential to be scaled down without significant performance loss. By virtue of these features, the device architecture is well-suited for large format ToF imaging arrays with integrated electronics.
• Score: 1.2019888796331233
• License: http://creativecommons.org/licenses/by-nc-nd/4.0/
• Abstract: A backside-illuminated (BSI) near-infrared enhanced silicon single-photon avalanche diode (SPAD) for time-of-flight (ToF) light detection and ranging applications is presented. The detector contains a 2 $\mu$m wide multiplication region with a spherically-uniform electric field peak enforced by field-line crowding. A charge-focusing electric field extends into a 10 $\mu$m deep absorption volume, whereby electrons generated in all corners of the device can move efficiently towards the multiplication region. The SPAD is integrated with a customized 130 nm CMOS technology and a dedicated BSI process. The device has a pitch of 15 $\mu$m, which has the potential to be scaled down without significant performance loss. Furthermore, the detector achieves a photon detection efficiency of 27% at 905 nm, with an excess bias of 3.5 V that is controlled by integrated CMOS electronics, and a timing resolution of 240 ps. By virtue of these features, the device architecture is well-suited for large format ToF imaging arrays with integrated electronics.

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