A Near-Infrared Enhanced Silicon Single-Photon Avalanche Diode with a Spherically Uniform Electric Field Peak

• URL: http://arxiv.org/abs/2105.05529v1
• Date: Wed, 12 May 2021 09:12:05 GMT
• Title: A Near-Infrared Enhanced Silicon Single-Photon Avalanche Diode with a Spherically Uniform Electric Field Peak
• Authors: Edward Van Sieleghem, Andreas S\"uss, Pierre Boulenc, Jiwon Lee, Gauri Karve, Koen De Munck, Celso Cavaco, Chris Van Hoof
• Abstract summary: A near-infrared (NIR) enhanced silicon single-photon avalanche diode (SPAD) is fabricated in a customized 0.13 $mu$m CMOS technology. The advantages of the SPAD architecture include high NIR photon detection efficiency (PDE), drift-based transport, low afterpulsing, and compatibility with an integrated CMOS readout.
• Score: 1.1140384738063094
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: A near-infrared (NIR) enhanced silicon single-photon avalanche diode (SPAD) fabricated in a customized 0.13 $\mu$m CMOS technology is presented. The SPAD has a depleted absorption volume of approximately 15 $\mu$m x 15 $\mu$m x 18 $\mu$m. Electrons generated in the absorption region are efficiently transported by drift to a central active avalanche region with a diameter of 2 $\mu$m. At the operating voltage, the active region contains a spherically uniform field peak, enabling the multiplication of electrons originating from all corners of the device. The advantages of the SPAD architecture include high NIR photon detection efficiency (PDE), drift-based transport, low afterpulsing, and compatibility with an integrated CMOS readout. A front-side illuminated device is fabricated and characterized. The SPAD has a PDE of 13% at wavelength 905 nm, an afterpulsing probability < 0.1% for a dead time of 13 ns, and a median dark count rate (DCR) of 840 Hz at room temperature. The device shows promising performance for time-of-flight applications that benefit from uniform NIR-sensitive SPAD arrays.

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