The remarkable prospect for quantum-dot-coupled tin qubits in silicon

• URL: http://arxiv.org/abs/2206.06285v1
• Date: Mon, 13 Jun 2022 16:16:07 GMT
• Title: The remarkable prospect for quantum-dot-coupled tin qubits in silicon
• Authors: Wayne M. Witzel and Jesse J. Lutz and Dwight R. Luhman
• Abstract summary: Tin is isoelectronic with silicon, so electrons can easily shuttle from one Sn atom to another to propagate quantum information. A hyperfine-induced electro-nuclear controlled-phase gate operation is predicted to be exceptionally resilient to charge/voltage noise.
• Score: 0.0
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: Spin-$\frac{1}{2}$ $^{119}$Sn nuclei in a silicon semiconductor could make excellent qubits. Nuclear spins in silicon are known to have long coherence times. Tin is isoelectronic with silicon, so we expect electrons can easily shuttle from one Sn atom to another to propagate quantum information via a hyperfine interaction that we predict, from all-electron linearized augmented plane wave density functional theory calculations, to be roughly ten times larger than intrinsic $^{29}$Si. A hyperfine-induced electro-nuclear controlled-phase (e-n-CPhase) gate operation, generated (up to local rotations) by merely holding an electron at a sweet-spot of maximum hyperfine strength for a specific duration of time, is predicted to be exceptionally resilient to charge/voltage noise. Diabatic spin flips are suppressed with a modest magnetic field ($>15~$mT for $<10^{-6}$ flip probabilities) and nuclear spin bath noise may be avoided via isotopic enrichment or mitigated using dynamical decoupling or through monitoring and compensation. Combined with magnetic resonance control, this operation enables universal quantum computation.

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