Random spin-orbit gates in the system of a Topological insulator and a Quantum dot

• URL: http://arxiv.org/abs/2212.11026v1
• Date: Wed, 21 Dec 2022 14:06:16 GMT
• Title: Random spin-orbit gates in the system of a Topological insulator and a Quantum dot
• Authors: S. Wolski, M. Inglot, C. Jasiukiewicz, K. A. Kouzakov, T. Mas{\l}owski, T. Szczepa\'nski, S. Stagraczy\'nski, R. Stagraczy\'nski, V. K. Dugaev, and L. Chotorlishvili
• Abstract summary: We study the spin-dependent scattering process in a system of topological insulator and quantum dot. For quantifying entanglement in the system, we explored concurrence and ensemble-averaged R'enyi entropy.
• Score: 0.0
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: The spin-dependent scattering process in a system of topological insulator and quantum dot is studied. The unitary scattering process is viewed as a gate transformation applied to an initial state of two electrons. Due to the randomness imposed through the impurities and alloying-induced effects of band parameters, the formalism of the random unitary gates is implemented. For quantifying entanglement in the system, we explored concurrence and ensemble-averaged R\'enyi entropy. We found that applied external magnetic field leads to long-range entanglement on the distances much larger than the confinement length. We showed that topological features of itinerant electrons sustain the formation of robust long-distance entanglement, which survives even in the presence of a strong disorder.

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