Using Cryogenic CMOS Control Electronics To Enable A Two-Qubit
Cross-Resonance Gate
- URL: http://arxiv.org/abs/2302.11538v3
- Date: Sat, 9 Dec 2023 04:36:23 GMT
- Title: Using Cryogenic CMOS Control Electronics To Enable A Two-Qubit
Cross-Resonance Gate
- Authors: Devin L. Underwood, Joseph A. Glick, Ken Inoue, David J. Frank, John
Timmerwilke, Emily Pritchett, Sudipto Chakraborty, Kevin Tien, Mark Yeck,
John F. Bulzacchelli, Chris Baks, Pat Rosno, Raphael Robertazzi, Matthew
Beck, Rajiv V. Joshi, Dorothy Wisnieff, Daniel Ramirez, Jeff Ruedinger, Scott
Lekuch, Brian P. Gaucher and Daniel J. Friedman
- Abstract summary: Qubit control electronics composed of CMOS circuits are of critical interest for next generation quantum computing systems.
A CMOS-based application specific integrated circuit (ASIC) fabricated in 14nm FinFET technology was used to generate and sequence qubit control waveforms.
The chip generated single-side banded output frequencies between 4.5 and 5.5 GHz with a maximum power output of -18 dBm.
- Score: 0.16199963058640043
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: Qubit control electronics composed of CMOS circuits are of critical interest
for next generation quantum computing systems. A CMOS-based application
specific integrated circuit (ASIC) fabricated in 14nm FinFET technology was
used to generate and sequence qubit control waveforms and demonstrate a
two-qubit cross resonance gate between fixed frequency transmons. The
controller was thermally anchored to the T = 4K stage of a dilution
refrigerator and the measured power was 23 mW per qubit under active control.
The chip generated single--side banded output frequencies between 4.5 and 5.5
GHz with a maximum power output of -18 dBm. Randomized benchmarking (RB)
experiments revealed an average number of 1.71 instructions per Clifford (IPC)
for single-qubit gates, and 17.51 IPC for two-qubit gates. A single-qubit error
per gate of $\epsilon_{\text{1Q}}$=8e-4 and two-qubit error per gate of
$\epsilon_\text{2Q}$=1.4e-2 is shown. A drive-induced Z-rotation is observed by
way of a rotary echo experiment; this observation is consistent with expected
qubit behavior given measured excess local oscillator (LO) leakage from the
CMOS chip. The effect of spurious drive induced Z-errors is numerically
evaluated with a two-qubit model Hamiltonian, and shown to be in good agreement
with measured RB data. The modeling results suggest the Z-error varies linearly
with pulse amplitude.
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