Free-running 4H-SiC single-photon detector with ultralow afterpulse probability at 266 nm

• URL: http://arxiv.org/abs/2302.14645v1
• Date: Mon, 20 Feb 2023 03:00:12 GMT
• Title: Free-running 4H-SiC single-photon detector with ultralow afterpulse probability at 266 nm
• Authors: Chao Yu, Tianyi Li, Xian-Song Zhao, Hai Lu, Rong Zhang, Feihu Xu, Jun Zhang, and Jian-Wei Pan
• Abstract summary: We report a 4H-SiC single-photon avalanche diode (SPAD) based free-running UVSPD with ultralow afterpulse probability. The compact UVSPD is then characterized, exhibiting a typical performance of 10.3% PDE, 133 kcps dark count rate and 0.3% afterpulse probability at 266 nm.
• Score: 14.664385624192663
• License: http://creativecommons.org/licenses/by-nc-nd/4.0/
• Abstract: Ultraviolet single-photon detector (UVSPD) provides a key tool for the applications requiring ultraweak light detection in the wavelength band. Here, we report a 4H-SiC single-photon avalanche diode (SPAD) based free-running UVSPD with ultralow afterpulse probability. We design and fabricate the 4H-SiC SPAD with a beveled mesa structure, which exhibits the characteristic of ultralow dark current. We further develop a readout circuit of passive quenching and active reset with tunable hold-off time setting to considerably suppress the afterpulsing effect. The nonuniformity of photon detection efficiency (PDE) across the SPAD active area with a diameter of $\sim$ 180 $\mu$m is investigated for performance optimization. The compact UVSPD is then characterized, exhibiting a typical performance of 10.3% PDE, 133 kcps dark count rate and 0.3% afterpulse probability at 266 nm. Such performance indicates that the compact UVSPD could be used for practical ultraviolet photon-counting applications

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