Related papers: A vertical gate-defined double quantum dot in a strained germanium double quantum well

A vertical gate-defined double quantum dot in a strained germanium double quantum well

URL: http://arxiv.org/abs/2305.14064v2
Date: Wed, 24 May 2023 16:45:02 GMT
Title: A vertical gate-defined double quantum dot in a strained germanium double quantum well
Authors: Hanifa Tidjani, Alberto Tosato, Alexander Ivlev, Corentin D\'eprez, Stefan Oosterhout, Lucas Stehouwer, Amir Sammak, Giordano Scappucci and Menno Veldhorst
Abstract summary: Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. We demonstrate the operation of a gate-defined vertical double quantum dot in a strained germanium double quantum well. We discuss challenges and opportunities and outline potential applications in quantum computing and quantum simulation.
Score: 48.7576911714538
License: http://creativecommons.org/publicdomain/zero/1.0/
Abstract: Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited to quantum dots defined in a single plane. Here, we propose to advance beyond planar systems by exploiting heterostructures with multiple quantum wells. We demonstrate the operation of a gate-defined vertical double quantum dot in a strained germanium double quantum well. In quantum transport measurements we observe stability diagrams corresponding to a double quantum dot system. We analyze the capacitive coupling to the nearby gates and find two quantum dots accumulated under the central plunger gate. We extract the position and estimated size, from which we conclude that the double quantum dots are vertically stacked in the two quantum wells. We discuss challenges and opportunities and outline potential applications in quantum computing and quantum simulation.

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