Related papers: Coupled vertical double quantum dots at single-hole occupancy

Coupled vertical double quantum dots at single-hole occupancy

URL: http://arxiv.org/abs/2401.07736v2
Date: Wed, 10 Jul 2024 12:17:57 GMT
Title: Coupled vertical double quantum dots at single-hole occupancy
Authors: Alexander Ivlev, Hanifa Tidjani, Stefan Oosterhout, Amir Sammak, Giordano Scappucci, Menno Veldhorst,
Abstract summary: We control vertical double quantum dots confined in a double quantum well, silicon-germanium heterostructure. We sense individual charge transitions with a single-hole transistor. tuning the vertical double quantum dot to the (1,1) charge state confines a single hole in each quantum well beneath a single plunger gate.
Score: 37.69303106863453
License: http://creativecommons.org/licenses/by/4.0/
Abstract: Gate-defined quantum dots define an attractive platform for quantum computation and have been used to confine individual charges in a planar array. Here, we demonstrate control over vertical double quantum dots confined in a double quantum well, silicon-germanium heterostructure. We sense individual charge transitions with a single-hole transistor. The vertical separation between the quantum wells provides a sufficient difference in capacitive coupling to distinguish quantum dots located in the top and bottom quantum well. Tuning the vertical double quantum dot to the (1,1) charge state confines a single hole in each quantum well beneath a single plunger gate. By simultaneously accumulating holes under two neighbouring plunger gates, we are able to tune to the (1,1,1,1) charge state. These results motivate quantum dot systems that exploit the third dimension, opening new opportunities for quantum simulation and quantum computing.

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