Site-Selective Enhancement of Superconducting Nanowire Single-Photon Detectors via Local Helium Ion Irradiation

• URL: http://arxiv.org/abs/2305.14175v1
• Date: Tue, 23 May 2023 15:51:13 GMT
• Title: Site-Selective Enhancement of Superconducting Nanowire Single-Photon Detectors via Local Helium Ion Irradiation
• Authors: Stefan Strohauer, Fabian Wietschorke, Lucio Zugliani, Rasmus Flaschmann, Christian Schmid, Stefanie Grotowski, Manuel M\"uller, Bj\"orn Jonas, Matthias Althammer, Rudolf Gross, Kai M\"uller, Jonathan J. Finley
• Abstract summary: We utilize local helium ion irradiation to tune single-photon detection efficiency, switching current, and critical temperature of individual devices on the same chip. For 12nm thick highly absorptive SNSPDs, we observe an increase of the system detection efficiency from $ 0.05,%$ to $(55.3 pm 1.1),%$ following irradiation. Investigations of the scaling of superconducting thin film properties with irradiation up to a fluence of $2600 revealed an increase of sheet resistance and a decrease of critical temperature towards high fluences.
• Score: 0.0
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: Achieving homogeneous performance metrics between nominally identical pixels is challenging for the operation of arrays of superconducting nanowire single-photon detectors (SNSPDs). Here, we utilize local helium ion irradiation to post-process and tune single-photon detection efficiency, switching current, and critical temperature of individual devices on the same chip. For 12nm thick highly absorptive SNSPDs, which are barely single-photon sensitive prior to irradiation, we observe an increase of the system detection efficiency from $< 0.05\,\%$ to $(55.3 \pm 1.1)\,\%$ following irradiation. Moreover, the internal detection efficiency saturates at a temperature of 4.5 K after irradiation with $1800\, \mathrm{ions}\, \mathrm{nm}^{-2}$. For irradiated 10 nm thick detectors we observe a doubling of the switching current (to $20\, \mu\mathrm{A}$) compared to 8 nm SNSPDs of similar detection efficiency, increasing the amplitude of detection voltage pulses. Investigations of the scaling of superconducting thin film properties with irradiation up to a fluence of $2600\, \mathrm{ions}\, \mathrm{nm}^{-2}$ revealed an increase of sheet resistance and a decrease of critical temperature towards high fluences. A physical model accounting for defect generation and sputtering during helium ion irradiation is presented and shows good qualitative agreement with experiments.

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