Nitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitride

• URL: http://arxiv.org/abs/2307.04476v3
• Date: Fri, 22 Sep 2023 01:24:36 GMT
• Title: Nitrogen isotope effects on boron vacancy quantum sensors in hexagonal boron nitride
• Authors: Kento Sasaki, Takashi Taniguchi, Kensuke Kobayashi
• Abstract summary: Investigation of nitrogen isotope effects on boron vacancy (V$_textB$) defects in $15$N isotopically enriched hBN. Raman shifts are scaled with the reduced mass, consistent with previous work on boron isotope enrichment.
• Score: 0.0
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: There has been growing interest in studying hexagonal boron nitride (hBN) for quantum technologies. Here, we investigate nitrogen isotope effects on boron vacancy (V$_\text{B}$) defects, one of the candidates for quantum sensors, in $^{15}$N isotopically enriched hBN synthesized using a metathesis reaction. The Raman shifts are scaled with the reduced mass, consistent with previous work on boron isotope enrichment. We obtain nitrogen isotopic composition-dependent magnetic resonance spectra of V$_\text{B}$ defects and determine the magnitude of the hyperfine interaction parameter of $^{15}$N spin to be 64 MHz. Our investigation provides a design policy for hBNs for quantum sensing.

Related papers

• Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride [62.170141783047974]
  Single photon emitters hosted in hexagonal boron nitride (hBN) are essential building blocks for quantum photonic technologies that operate at room temperature. We experimentally demonstrate large-area arrays of plasmonic nanoresonators for Purcell-induced site-controlled SPEs. Our results offer arrays of bright, heterogeneously integrated quantum light sources, paving the way for robust and scalable quantum information systems.
  arXiv  Detail & Related papers  (2024-05-03T23:02:30Z)
• Isotopic control of the boron-vacancy spin defect in hexagonal boron nitride [0.0]
  We show that isotopic purification of hBN with $15$N yields a simplified and well-resolved hyperfine structure of V$_textB-$ centers. We then demonstrate optically-induced polarization of $15$N nuclei in h$10$B$15$N, whose mechanism relies on electron-nuclear spin mixing in the V$_textB-$ ground state.
  arXiv  Detail & Related papers  (2023-07-13T14:26:22Z)
• Nuclear Spin-Depleted, Isotopically Enriched 70Ge/28Si70Ge Quantum Wells [0.0]
  This work demonstrates the epitaxial growth of $text73$Ge-depleted isotopically enriched $text70$Ge/SiGe quantum wells. The measured average distance between nuclear spins reaches 3-4 nm in $text70$Ge/$text28$Si$text70$Ge, which is an order of magnitude larger than in natural Ge/SiGe heterostructures.
  arXiv  Detail & Related papers  (2023-06-06T22:53:30Z)
• Atom-Number Enhancement by Shielding Atoms from Losses in Strontium Magneto-Optical Traps [0.0]
  We present a scheme to enhance the atom number in magneto-optical traps of strontium atoms operating on the 461 nm transition. We show a factor of two enhancement in the atom number for the bosonic isotopes $88$Sr and $84$Sr, and the fermionic isotope $87$Sr, in good agreement with our model.
  arXiv  Detail & Related papers  (2023-02-06T18:29:41Z)
• All-Optical Nuclear Quantum Sensing using Nitrogen-Vacancy Centers in Diamond [52.77024349608834]
  Microwave or radio-frequency driving poses a significant limitation for miniaturization, energy-efficiency and non-invasiveness of quantum sensors. We overcome this limitation by demonstrating a purely optical approach to coherent quantum sensing. Our results pave the way for highly compact quantum sensors to be employed for magnetometry or gyroscopy applications.
  arXiv  Detail & Related papers  (2022-12-14T08:34:11Z)
• Review on coherent quantum emitters in hexagonal boron nitride [91.3755431537592]
  I discuss the state-of-the-art of defect centers in hexagonal boron nitride with a focus on optically coherent defect centers. The spectral transition linewidth remains unusually narrow even at room temperature. The field is put into a broad perspective with impact on quantum technology such as quantum optics, quantum photonics as well as spin optomechanics.
  arXiv  Detail & Related papers  (2022-01-31T12:49:43Z)
• Decoherence of V$_{\rm B}^{-}$ spin defects in monoisotopic hexagonal boron nitride [0.0]
  Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either $10$B or $11$B to investigate the isotope-dependent properties of a spin defect featuring a broadband photoluminescence signal in the near infrared.
  arXiv  Detail & Related papers  (2021-12-19T15:51:07Z)
• Excited-state spectroscopy of spin defects in hexagonal boron nitride [20.739656944743345]
  We probed electron-spin resonance transitions in the excited state of negatively-charged boron vacancy defects in hexagonal boron nitride (hBN) at room temperature. The data showed that the excited state has a zero-field splitting of 2.1 GHz, a g factor similar to the ground state and two types of hyperfine splitting 90 MHz and 18.8 MHz respectively. Negative peaks in photoluminescence and ODMR contrast as a function of magnetic field magnitude and angle at level anti-crossing were observed and explained by coherent spin precession and anisotropic relaxation.
  arXiv  Detail & Related papers  (2021-12-06T10:28:57Z)
• Phonon dephasing and spectral diffusion of quantum emitters in hexagonal Boron Nitride [52.915502553459724]
  Quantum emitters in hexagonal boron nitride (hBN) are emerging as bright and robust sources of single photons for applications in quantum optics. We study phonon dephasing and spectral diffusion of quantum emitters in hBN via resonant excitation spectroscopy at cryogenic temperatures.
  arXiv  Detail & Related papers  (2021-05-25T05:56:18Z)
• Optical repumping of resonantly excited quantum emitters in hexagonal boron nitride [52.77024349608834]
  We present an optical co-excitation scheme which uses a weak non-resonant laser to reduce transitions to a dark state and amplify the photoluminescence from quantum emitters in hexagonal boron nitride (hBN) Our results are important for the deployment of atom-like defects in hBN as reliable building blocks for quantum photonic applications.
  arXiv  Detail & Related papers  (2020-09-11T10:15:22Z)
• Mechanical Decoupling of Quantum Emitters in Hexagonal Boron Nitride from Low-Energy Phonon Modes [52.77024349608834]
  Quantum emitters in hexagonal Boron Nitride (hBN) were recently reported to hol a homogeneous linewidth according to the Fourier-Transform limit up to room temperature. This unusual observation was traced back to decoupling from in-plane phonon modes which can arise if the emitter is located between two planes of the hBN host material.
  arXiv  Detail & Related papers  (2020-04-22T20:00:49Z)

This list is automatically generated from the titles and abstracts of the papers in this site.

This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.