Isotopic control of the boron-vacancy spin defect in hexagonal boron nitride

• URL: http://arxiv.org/abs/2307.06774v1
• Date: Thu, 13 Jul 2023 14:26:22 GMT
• Title: Isotopic control of the boron-vacancy spin defect in hexagonal boron nitride
• Authors: T. Clua-Provost, A. Durand, Z. Mu, T. Rastoin, J. Frauni\'e, E. Janzen, H. Schutte, J. H. Edgar, G. Seine, A. Claverie, X. Marie, C. Robert, B. Gil, G. Cassabois, and V. Jacques
• Abstract summary: We show that isotopic purification of hBN with $15$N yields a simplified and well-resolved hyperfine structure of V$_textB-$ centers. We then demonstrate optically-induced polarization of $15$N nuclei in h$10$B$15$N, whose mechanism relies on electron-nuclear spin mixing in the V$_textB-$ ground state.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V$_\text{B}^-$) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with $^{15}$N yields a simplified and well-resolved hyperfine structure of V$_\text{B}^-$ centers, while purification with $^{10}$B leads to narrower ESR linewidths. These results establish isotopically-purified h$^{10}$B$^{15}$N crystals as the optimal host material for future use of V$_\text{B}^-$ spin defects in quantum technologies. Capitalizing on these findings, we then demonstrate optically-induced polarization of $^{15}$N nuclei in h$^{10}$B$^{15}$N, whose mechanism relies on electron-nuclear spin mixing in the V$_\text{B}^-$ ground state. This work opens up new prospects for future developments of spin-based quantum sensors and simulators on a two-dimensional material platform.

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