Integrated Mode-Hop-Free Tunable Lasers at 780 nm for Chip-Scale Classical and Quantum Photonic Applications

• URL: http://arxiv.org/abs/2407.15438v1
• Date: Mon, 22 Jul 2024 07:33:34 GMT
• Title: Integrated Mode-Hop-Free Tunable Lasers at 780 nm for Chip-Scale Classical and Quantum Photonic Applications
• Authors: Joshua E. Castro, Eber Nolasco-Martinez, Paolo Pintus, Zeyu Zhang, Boqiang Shen, Theodore Morin, Lillian Thiel, Trevor J. Steiner, Nicholas Lewis, Sahil D. Patel, John E. Bowers, David M. Weld, Galan Moody,
• Abstract summary: Integrated continuously tunable laser in a heterogeneous gallium arsenide-on-silicon nitride (GaAs-on-SiN) platform. Laser emits in the far-red radiation spectrum near 780 nm, with 20 nm tuning range, 6 kHz intrinsic linewidth, and a >40 dB side-mode suppression ratio. The proposed integrated laser holds promise for a broader spectrum of both classical and quantum applications in the visible range.
• Score: 1.5150335879032768
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: In the last decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost. Here, we demonstrate an integrated continuously tunable laser in a heterogeneous gallium arsenide-on-silicon nitride (GaAs-on-SiN) platform that emits in the far-red radiation spectrum near 780 nm, with 20 nm tuning range, <6 kHz intrinsic linewidth, and a >40 dB side-mode suppression ratio. The GaAs optical gain regions are heterogeneously integrated with low-loss SiN waveguides. The narrow linewidth lasing is achieved with an extended cavity consisting of a resonator-based Vernier mirror and a phase shifter. Utilizing synchronous tuning of the integrated heaters, we show mode-hop-free wavelength tuning over a range larger than 100 GHz (200 pm). To demonstrate the potential of the device, we investigate two illustrative applications: (i) the linear characterization of a silicon nitride microresonator designed for entangled-photon pair generation, and (ii) the absorption spectroscopy and locking to the D1 and D2 transition lines of 87-Rb. The performance of the proposed integrated laser holds promise for a broader spectrum of both classical and quantum applications in the visible range, encompassing communication, control, sensing, and computing.

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