Quantum Emission from Coupled Spin Pairs in Hexagonal Boron Nitride

• URL: http://arxiv.org/abs/2408.13515v2
• Date: Mon, 9 Sep 2024 06:49:47 GMT
• Title: Quantum Emission from Coupled Spin Pairs in Hexagonal Boron Nitride
• Authors: Song Li, Anton Pershin, Adam Gali,
• Abstract summary: Optically addressable defect qubits in wide band gap materials are favorable candidates for room temperature quantum information processing. The two-dimensional hexagonal boron nitride (hBN) is an attractive solid state platform with a great potential for hosting bright quantum emitters with quantum memories.
• Score: 4.1020458874018795
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: Optically addressable defect qubits in wide band gap materials are favorable candidates for room temperature quantum information processing. The two-dimensional (2D) hexagonal boron nitride (hBN) is an attractive solid state platform with a great potential for hosting bright quantum emitters with quantum memories with leveraging the potential of 2D materials for realizing scalable preparation of defect qubits. Although, room temperature bright defect qubits have been recently reported in hBN but their microscopic origin, the nature of the optical transition as well as the optically detected magnetic resonance (ODMR) have been remained elusive. Here we connect the variance in the optical spectra, optical lifetimes and spectral stability of quantum emitters to donor-acceptor pairs (DAP) in hBN by means of ab initio calculations. We find that DAPs can exhibit ODMR signal for the acceptor counterpart of the defect pair with S=1/2 ground state at non-zero magnetic fields depending on the donor partner. The donor-acceptor pair model and its transition mechanisms provide a recipe towards defect qubit identification and performance optimization in hBN for quantum applications.

Related papers

• Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride [62.170141783047974]
  Single photon emitters hosted in hexagonal boron nitride (hBN) are essential building blocks for quantum photonic technologies that operate at room temperature. We experimentally demonstrate large-area arrays of plasmonic nanoresonators for Purcell-induced site-controlled SPEs. Our results offer arrays of bright, heterogeneously integrated quantum light sources, paving the way for robust and scalable quantum information systems.
  arXiv  Detail & Related papers  (2024-05-03T23:02:30Z)
• Near-coherent quantum emitters in hexagonal boron nitride with discrete polarization axes [0.0]
  Hexagonal boron nitride (hBN) has recently gained attention as a solid state host of quantum emitters. Here we employ spectral hole burning spectroscopy and resonant polarization measurements to observe nearly-coherent hBN quantum emitters.
  arXiv  Detail & Related papers  (2024-02-19T02:28:06Z)
• Identifying electronic transitions of defects in hexagonal boron nitride for quantum memories [0.6827423171182154]
  A quantum memory is a crucial keystone for enabling large-scale quantum networks. This work proposes a quantum memory based on color centers in hexagonal boron nitride (hBN) It is found that some defects inherit the $Lambda$ electronic structures desirable for a Raman-type quantum memory.
  arXiv  Detail & Related papers  (2023-10-31T17:13:07Z)
• Quantum sensing and imaging with spin defects in hexagonal boron nitride [2.8409310270487538]
  Color centers in hexagonal boron nitride (hBN) have emerged as promising candidates for a new wave of quantum applications. The recently discovered optically addressable spin defects in hBN provide a quantum interface between photons and electron spins for quantum sensing applications. This review summarizes the rapidly evolving field of nanoscale and microscale quantum sensing with spin defects in hBN.
  arXiv  Detail & Related papers  (2023-02-22T06:21:28Z)
• Characteristics of quantum emitters in hexagonal boron nitride suitable for integration with nanophotonic platforms [6.56645008669449]
  Single photon emitters in 2D hexagonal boron nitride (hBN) are promising solid-state quantum emitters for photonic applications and quantum networks. We focus on two different kinds of hBN samples that particularly lend themselves for integration with nanophotonic devices.
  arXiv  Detail & Related papers  (2022-10-20T08:51:03Z)
• Single quantum emitters with spin ground states based on Cl bound excitons in ZnSe [55.41644538483948]
  We show a new type of single photon emitter with potential electron spin qubit based on Cl impurities inSe. Results suggest single Cl impurities are suitable as single photon source with potential photonic interface.
  arXiv  Detail & Related papers  (2022-03-11T04:29:21Z)
• Review on coherent quantum emitters in hexagonal boron nitride [91.3755431537592]
  I discuss the state-of-the-art of defect centers in hexagonal boron nitride with a focus on optically coherent defect centers. The spectral transition linewidth remains unusually narrow even at room temperature. The field is put into a broad perspective with impact on quantum technology such as quantum optics, quantum photonics as well as spin optomechanics.
  arXiv  Detail & Related papers  (2022-01-31T12:49:43Z)
• Cavity Quantum Electrodynamics Design with Single Photon Emitters in Hexagonal Boron Nitride [6.352389759470726]
  We numerically investigate the cavity quantum electrodynamics (cavity-QED) scheme incorporating defect-enabled single photon emitters in h-BN microdisk resonators. The whispering-gallery nature of microdisks can support multiple families of cavity resonances with different radial and azimuthal mode indices simultaneously. This study contributes toward realizing h-BN photonic components, such as low-threshold microcavity lasers and high-purity single photon sources.
  arXiv  Detail & Related papers  (2021-06-05T21:53:44Z)
• Room temperature single-photon emitters in silicon nitride [97.75917079876487]
  We report on the first-time observation of room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide substrates. As SiN has recently emerged as one of the most promising materials for integrated quantum photonics, the proposed platform is suitable for scalable fabrication of quantum on-chip devices.
  arXiv  Detail & Related papers  (2021-04-16T14:20:11Z)
• Optical repumping of resonantly excited quantum emitters in hexagonal boron nitride [52.77024349608834]
  We present an optical co-excitation scheme which uses a weak non-resonant laser to reduce transitions to a dark state and amplify the photoluminescence from quantum emitters in hexagonal boron nitride (hBN) Our results are important for the deployment of atom-like defects in hBN as reliable building blocks for quantum photonic applications.
  arXiv  Detail & Related papers  (2020-09-11T10:15:22Z)
• Mechanical Decoupling of Quantum Emitters in Hexagonal Boron Nitride from Low-Energy Phonon Modes [52.77024349608834]
  Quantum emitters in hexagonal Boron Nitride (hBN) were recently reported to hol a homogeneous linewidth according to the Fourier-Transform limit up to room temperature. This unusual observation was traced back to decoupling from in-plane phonon modes which can arise if the emitter is located between two planes of the hBN host material.
  arXiv  Detail & Related papers  (2020-04-22T20:00:49Z)

This list is automatically generated from the titles and abstracts of the papers in this site.

This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.