Related papers: Engineering Si-Qubit MOSFETs: A Phase-Field Modeling Approach Integrating Quantum-Electrostatics at Cryogenic Temperatures

Engineering Si-Qubit MOSFETs: A Phase-Field Modeling Approach Integrating Quantum-Electrostatics at Cryogenic Temperatures

URL: http://arxiv.org/abs/2410.04339v1
Date: Sun, 6 Oct 2024 03:25:07 GMT
Title: Engineering Si-Qubit MOSFETs: A Phase-Field Modeling Approach Integrating Quantum-Electrostatics at Cryogenic Temperatures
Authors: Nilesh Pandey, Dipanjan Basu, Yogesh Singh Chauhan, Leonard F. Register, Sanjay K. Banerjee,
Abstract summary: This study employs advanced phase-field modeling to investigate Si-based qubits. We adopt a comprehensive modeling approach, utilizing full-wave treatment of the Schrodinger equation solutions, coupled with the Poisson equation at cryogenic temperatures.
Score: 0.3015860973324597
License: http://creativecommons.org/licenses/by/4.0/
Abstract: This study employs advanced phase-field modeling to investigate Si-based qubit MOSFETs, integrating electrostatics and quantum mechanical effects. We adopt a comprehensive modeling approach, utilizing full-wave treatment of the Schrodinger equation solutions, coupled with the Poisson equation at cryogenic temperatures. Our analysis explores the influence of interface traps on quantum dot (QD) barrier heights, affecting coupling due to tunneling. A wider trap distribution leads to the decoupling of quantum dots. Furthermore, the oscillations in the transmission and reflection coefficients increase as the plunger/barrier gate length increases, reducing the coupling between the QDs. By optimizing plunger and barrier gate dimensions, spacer configurations, and gap oxide lengths, we enhance control over quantum well depths and minimize unwanted wave function leakage. The modeling algorithm is also validated against the experimental data and can accurately capture the oscillations in the Id Vgs caused by the Coulomb blockade at cryogenic temperature

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