Single photon emitters in thin GaAsN nanowire tubes grown on Si

• URL: http://arxiv.org/abs/2411.03185v1
• Date: Tue, 05 Nov 2024 15:29:42 GMT
• Title: Single photon emitters in thin GaAsN nanowire tubes grown on Si
• Authors: Nadine Denis, Didem Dede, Timur Nurmamytov, Salvatore Cianci, Francesca Santangeli, Marco Felici, Victor Boureau, Antonio Polimeni, Silvia Rubini, Anna Fontcuberta i Morral, Marta De Luca,
• Abstract summary: III-V nanowire heterostructures can act as sources of single and entangled photons. We report the plasma-assisted molecular beam epitaxy growth of thin GaAs/GaAsN/GaAs core-multishell nanowires monolithically integrated on Si (111) substrates.
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• Abstract: III-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate lattice-mismatched components beyond the limits of planar epilayers and to create radially and axially confined quantum structures. Here, we report the plasma-assisted molecular beam epitaxy growth of thin GaAs/GaAsN/GaAs core-multishell nanowires monolithically integrated on Si (111) substrates, overcoming the challenges caused by the low solubility of N and a high lattice mismatch. The nanowires have a GaAsN shell of 10 nm containing 2.7% N, which reduces the GaAs bandgap drastically by 400 meV. They have a symmetric core-shell structure with sharp boundaries and a defect-free zincblende phase. The high structural quality reflects in their excellent opto-electroinic properties, including remarkable single photon emission from quantum confined states in the thin GaAsN shell with a second-order autocorrelation function at zero time delay as low as 0.056.

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