Telecom quantum dots on GaAs substrates as integration-ready high performance single-photon sources

• URL: http://arxiv.org/abs/2505.22886v1
• Date: Wed, 28 May 2025 21:41:56 GMT
• Title: Telecom quantum dots on GaAs substrates as integration-ready high performance single-photon sources
• Authors: Beatrice Costa, Bianca Scaparra, Xiao Wei, Hubert Riedl, Gregor Koblmüller, Eugenio Zallo, Jonathan Finley, Lukas Hanschke, Kai Müller,
• Abstract summary: Development of deterministic single photon sources emitting in the telecommunication bands is a key challenge for quantum communication and photonic quantum computing.<n>Here, we investigate the optical properties and single-photon emission of molecular beam epitaxy grown semiconductor quantum dots emitting in the telecom O- and C- bands.<n>In detailed optical characterizations we observe linewidths as low as $ 50 mu$eV, close to the spectrometer resolution limit, low fine structure splittings close to $ 10 mu$eV, and $g(2) (0)$ values as low as $0.08$.
• Score: 2.0359783842100714
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: The development of deterministic single photon sources emitting in the telecommunication bands is a key challenge for quantum communication and photonic quantum computing. Here, we investigate the optical properties and single-photon emission of molecular beam epitaxy grown semiconductor quantum dots emitting in the telecom O- and C- bands. The quantum dots are embedded in a InGaAs matrix with fixed indium content grown on top of a compositionally graded InGaAs buffer. This structure allows for the future implementation of electrically contacted nanocavities to enable high-quality and bright QD emission. In detailed optical characterizations we observe linewidths as low as $ 50 \mu$eV, close to the spectrometer resolution limit, low fine structure splittings close to $ 10 \mu$eV, and $g^{(2)} (0)$ values as low as $0.08$. These results advance the current performance metrics for MBE-grown quantum dots on GaAs substrates emitting in the telecom bands and showcase the potential of the presented heterostructures for further integration into photonic devices.

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