Bright and Purcell-enhanced single photon emission from a silicon G center

• URL: http://arxiv.org/abs/2412.10603v1
• Date: Fri, 13 Dec 2024 23:10:44 GMT
• Title: Bright and Purcell-enhanced single photon emission from a silicon G center
• Authors: Kyu-Young Kim, Chang-Min Lee, Amirehsan Boreiri, Purbita Purkayastha, Fariba Islam, Samuel Harper, Je-Hyung Kim, Edo Waks,
• Abstract summary: We show bright Purcell-enhanced emission from a silicon G center by coupling it to a nanophotonic cavity. We obtain a spontaneous emission rate of 0.97 ns, which is the fastest single photon emission rate reported in silicon.
• Score: 0.2413409939867421
• License:
• Abstract: Silicon G centers show significant promise as single photon sources in a scalable silicon platform. But these color centers have large non-radiative decay and a low Debye-Waller factor, limiting their usability in quantum applications. In this work, we demonstrate bright Purcell-enhanced emission from a silicon G center by coupling it to a nanophotonic cavity. The nanobeam cavity enhances the spontaneous emission rate of a single G center by a factor of 6, corresponding to a Purcell factor greater than 31 when accounting for decay into the phonon sideband. We obtain a spontaneous emission rate of 0.97 ns, which is the fastest single photon emission rate reported in silicon. With this radiative enhancement, we achieve an order of magnitude improvement in emitter brightness compared to previously reported values. These results pave the way for scalable quantum light sources on a silicon photonic chip.

Related papers

• Bright single-photon source in a silicon chip by nanoscale positioning of a color center in a microcavity [0.0]
  We present an all-silicon source of near-infrared linearly-polarized single photons fabricated by nanoscale positioning of a color center in a silicon-on-insulator microcavity. Results represent a major step towards on-demand sources of indistinguishable near-infrared single photons within silicon photonics chips.
  arXiv  Detail & Related papers  (2025-01-22T09:25:29Z)
• Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride [62.170141783047974]
  Single photon emitters hosted in hexagonal boron nitride (hBN) are essential building blocks for quantum photonic technologies that operate at room temperature. We experimentally demonstrate large-area arrays of plasmonic nanoresonators for Purcell-induced site-controlled SPEs. Our results offer arrays of bright, heterogeneously integrated quantum light sources, paving the way for robust and scalable quantum information systems.
  arXiv  Detail & Related papers  (2024-05-03T23:02:30Z)
• Quantum Emitters in Aluminum Nitride Induced by Zirconium Ion Implantation [70.64959705888512]
  This study investigates aluminum nitride (AlN) as a material with properties highly suitable for integrated on-chip photonics. We conduct a comprehensive study of the creation and photophysical properties of single-photon emitters in AlN utilizing Zirconium (Zr) and Krypton (Kr) heavy ion implantation. With the 532 nm excitation wavelength, we found that single-photon emitters induced by ion implantation are primarily associated with vacancy-type defects in the AlN lattice for both Zr and Kr ions.
  arXiv  Detail & Related papers  (2024-01-26T03:50:33Z)
• Purcell enhancement of silicon W centers in circular Bragg grating cavities [0.0]
  In this work, we perform cavity quantum electrodynamics experiments with ensembles of artificial atoms embedded in silicon-on-insulator microresonators. We observe a 20-fold enhancement of the zero-phonon line intensity, together with a two-fold decrease of the total relaxation time in time-resolved photoluminescence experiments. We obtain a good agreement with our experimental results assuming a quantum efficiency of $65 pm 10 %$ for the emitters in bulk silicon.
  arXiv  Detail & Related papers  (2023-10-27T13:09:27Z)
• Cavity enhanced emission from a silicon T center [0.23917125666169287]
  T centers exhibit long excited state lifetimes and a low Debye-Waller factor, making them dim emitters with low efficiency into the zero-phonon line. Nanophotonic cavities can solve this problem by enhancing radiative emission into the zero-phonon line through the Purcell effect.
  arXiv  Detail & Related papers  (2023-10-20T20:45:54Z)
• Cavity-enhanced single photon emission from a single impurity-bound exciton [42.2225785045544]
  Impurity-bound excitons inSe quantum wells are bright single photon emitters. We demonstrate cavity-enhanced emission from a single impurity-bound exciton in aSe quantum well.
  arXiv  Detail & Related papers  (2023-09-04T18:06:54Z)
• High-efficiency single photon emission from a silicon T-center in a nanobeam [0.7656045817750738]
  Color centers in Si could serve as both efficient quantum emitters and quantum memories with long coherence times. We demonstrate high-efficiency single photon emission from a single T center using a nanobeam.
  arXiv  Detail & Related papers  (2023-08-08T19:17:24Z)
• Purcell enhancement of single-photon emitters in silicon [68.8204255655161]
  Individual spins that are coupled to telecommunication photons offer unique promise for distributed quantum information processing. We implement such an interface by integrating erbium dopants into a nanophotonic silicon resonator. We observe optical Rabi oscillations and single-photon emission with a 78-fold Purcell enhancement.
  arXiv  Detail & Related papers  (2023-01-18T19:38:38Z)
• Single quantum emitters with spin ground states based on Cl bound excitons in ZnSe [55.41644538483948]
  We show a new type of single photon emitter with potential electron spin qubit based on Cl impurities inSe. Results suggest single Cl impurities are suitable as single photon source with potential photonic interface.
  arXiv  Detail & Related papers  (2022-03-11T04:29:21Z)
• Room temperature single-photon emitters in silicon nitride [97.75917079876487]
  We report on the first-time observation of room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide substrates. As SiN has recently emerged as one of the most promising materials for integrated quantum photonics, the proposed platform is suitable for scalable fabrication of quantum on-chip devices.
  arXiv  Detail & Related papers  (2021-04-16T14:20:11Z)
• Optical repumping of resonantly excited quantum emitters in hexagonal boron nitride [52.77024349608834]
  We present an optical co-excitation scheme which uses a weak non-resonant laser to reduce transitions to a dark state and amplify the photoluminescence from quantum emitters in hexagonal boron nitride (hBN) Our results are important for the deployment of atom-like defects in hBN as reliable building blocks for quantum photonic applications.
  arXiv  Detail & Related papers  (2020-09-11T10:15:22Z)

This list is automatically generated from the titles and abstracts of the papers in this site.

This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.