Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes

• URL: http://arxiv.org/abs/2504.00154v2
• Date: Sun, 13 Apr 2025 00:11:56 GMT
• Title: Spin-Phonon Relaxation of Boron-Vacancy Centers in Two-Dimensional Boron Nitride Polytypes
• Authors: Nasrin Estaji, Ismaeil Abdolhosseini Sarsari, Gergő Thiering, Adam Gali,
• Abstract summary: We present a systematic first-principles investigation of the negatively charged boron-vacancy defect in monolayer boron nitride (BN)<n>Our results reveal that the $T_textB-$ times of V$_textB-$ in monolayer BN and hBN are nearly identical at room temperature.<n>Surprisingly, despite the symmetry reduction in rBN opening additional spin relaxation channels, V$_textB-$ exhibits a longer $T_$ compared to hBN.
• Score: 0.0
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: Two-dimensional (2D) materials hosting color centers and spin defects are emerging as key platforms for quantum technologies. However, the impact of reduced dimensionality on the spin-lattice relaxation time ($T_1$) of embedded defect spins -- critical for quantum applications -- remains largely unexplored. In this study, we present a systematic first-principles investigation of the negatively charged boron-vacancy (V$_{\text{B}}^-$) defect in monolayer boron nitride (BN), as well as in AA$^\prime$-stacked hexagonal BN (hBN) and ABC-stacked rhombohedral BN (rBN). Our results reveal that the $T_1$ times of V$_{\text{B}}^-$ in monolayer BN and hBN are nearly identical at room temperature. Surprisingly, despite the symmetry reduction in rBN opening additional spin relaxation channels, V$_{\text{B}}^-$ exhibits a longer $T_1$ compared to hBN. We attribute this effect to the stiffer out-of-plane phonon modes in rBN, which activate spin-phonon relaxation at reduced strength. These findings suggest that V$_{\text{B}}^-$ in rBN offers enhanced spin coherence properties, making it a promising candidate for quantum technology applications.

Related papers

• Experimental observation of spin defects in van der Waals material GeS$_2$ [0.0]
  Two-dimensional (2D) materials such as hexagonal boron nitride (hBN) attract significant attention for their potential quantum applications. Here, we present another 2D material germanium disulfide ($beta$-GeS$$) characterized by a wide bandgap and potential nuclear-spin-free lattice. Our findings reveal the presence of more than two distinct types of spin defects in single-crystal $beta$-GeS$$.
  arXiv  Detail & Related papers  (2024-10-24T16:29:05Z)
• Single nuclear spin detection and control in a van der Waals material [7.00960815874496]
  Recently, single spin defects were discovered in hexagonal boron nitride (hBN), a layered van der Waals (vdW) material. We created single spin defects in hBN using $13$C ion implantation and identified three distinct defect types. For the first time, we demonstrated atomic-scale NMR and coherent control of individual nuclear spins in a vdW material.
  arXiv  Detail & Related papers  (2024-09-03T04:47:35Z)
• Isotopic control of the boron-vacancy spin defect in hexagonal boron nitride [0.0]
  We show that isotopic purification of hBN with $15$N yields a simplified and well-resolved hyperfine structure of V$_textB-$ centers. We then demonstrate optically-induced polarization of $15$N nuclei in h$10$B$15$N, whose mechanism relies on electron-nuclear spin mixing in the V$_textB-$ ground state.
  arXiv  Detail & Related papers  (2023-07-13T14:26:22Z)
• Spin-phonon decoherence in solid-state paramagnetic defects from first principles [79.4957965474334]
  Paramagnetic defects in diamond and hexagonal boron nitride possess a unique combination of spin and optical properties that make them solid-state qubits. Despite the coherence of these spin qubits being critically limited by spin-phonon relaxation, a full understanding of this process is not yet available. We demonstrate that low-frequency two-phonon modulations of the zero-field splitting are responsible for spin relaxation and decoherence.
  arXiv  Detail & Related papers  (2022-12-22T13:48:05Z)
• A first-principles calculation of electron-phonon interactions for the $\text{C}_2\text{C}_\text{N}$ and $\text{V}_\text{N}\text{N}_\text{B}$ defects in hexagonal boron nitride [52.77024349608834]
  Quantum emitters in two-dimensional hexagonal boron nitride (h-BN) have generated significant interest. Recent observations of Fourier transform (FT) limited photons emitted from h-BN flakes at room temperature.
  arXiv  Detail & Related papers  (2022-07-28T23:31:38Z)
• Computational Insights into Electronic Excitations, Spin-Orbit Coupling Effects, and Spin Decoherence in Cr(IV)-based Molecular Qubits [63.18666008322476]
  We provide insights into key properties of Cr(IV)-based molecules aimed at assisting chemical design of efficient molecular qubits. We find that the sign of the uniaxial zero-field splitting (ZFS) parameter is negative for all considered molecules. We quantify (super)hyperfine coupling to the $53$Cr nuclear spin and to the $13C and $1H nuclear spins.
  arXiv  Detail & Related papers  (2022-05-01T01:23:10Z)
• Correlative nanoscale imaging of strained hBN spin defects [42.60602838972598]
  Spin defects like the negatively charged boron vacancy color center ($V_B-$) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. We reveal the effect of strain associated with creases in hBN flakes on $V_B-$ and $V_B$ color centers in hBN with correlative cathodoluminescence and photoluminescence microscopies.
  arXiv  Detail & Related papers  (2022-03-18T17:42:09Z)
• Decoherence of V$_{\rm B}^{-}$ spin defects in monoisotopic hexagonal boron nitride [0.0]
  Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either $10$B or $11$B to investigate the isotope-dependent properties of a spin defect featuring a broadband photoluminescence signal in the near infrared.
  arXiv  Detail & Related papers  (2021-12-19T15:51:07Z)
• A multiconfigurational study of the negatively charged nitrogen-vacancy center in diamond [55.58269472099399]
  Deep defects in wide band gap semiconductors have emerged as leading qubit candidates for realizing quantum sensing and information applications. Here we show that unlike single-particle treatments, the multiconfigurational quantum chemistry methods, traditionally reserved for atoms/molecules, accurately describe the many-body characteristics of the electronic states of these defect centers.
  arXiv  Detail & Related papers  (2020-08-24T01:49:54Z)
• Mechanical Decoupling of Quantum Emitters in Hexagonal Boron Nitride from Low-Energy Phonon Modes [52.77024349608834]
  Quantum emitters in hexagonal Boron Nitride (hBN) were recently reported to hol a homogeneous linewidth according to the Fourier-Transform limit up to room temperature. This unusual observation was traced back to decoupling from in-plane phonon modes which can arise if the emitter is located between two planes of the hBN host material.
  arXiv  Detail & Related papers  (2020-04-22T20:00:49Z)

This list is automatically generated from the titles and abstracts of the papers in this site.

This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.