Atomic-scale imaging and charge state manipulation of NV centers by scanning tunneling microscopy
- URL: http://arxiv.org/abs/2504.13280v1
- Date: Thu, 17 Apr 2025 18:43:56 GMT
- Title: Atomic-scale imaging and charge state manipulation of NV centers by scanning tunneling microscopy
- Authors: Arjun Raghavan, Seokjin Bae, Nazar Delegan, F. Joseph Heremans, Vidya Madhavan,
- Abstract summary: Nitrogen-vacancy (NV) centers in diamond are among the most promising solid-state qubit candidates.<n>Despite significant progress in the field, atomic-scale characterization and control of individual NV centers have remained elusive.<n>We present a novel approach utilizing a conductive graphene capping layer to enable direct imaging and manipulation of $NV-$ defects.
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- License: http://creativecommons.org/licenses/by/4.0/
- Abstract: Nitrogen-vacancy (NV) centers in diamond are among the most promising solid-state qubit candidates, owing to their exceptionally long spin coherence times, efficient spin-photon coupling, room-temperature operation, and steadily advancing fabrication and integration techniques. Despite significant progress in the field, atomic-scale characterization and control of individual NV centers have remained elusive. In this work, we present a novel approach utilizing a conductive graphene capping layer to enable direct imaging and manipulation of $NV^{-}$ defects via scanning tunneling microscopy (STM). By investigating over 40 individual $NV^{-}$ centers, we identify their spectroscopic signatures and spatial configurations. Our dI/dV conductance spectra reveal the ground state approximately 300 meV below the Fermi level. Additionally, density-of-states mapping uncovers a two-lobed wavefunction aligned along the [111] crystallographic direction. Remarkably, we demonstrate the ability to manipulate the charge state of the NV centers from $NV^{-}$ to $NV^{0}$ through STM tip-induced gating. This work represents a significant advancement in the atomic-scale understanding and engineering of NV centers, paving the way for future quantum device development.
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