Resonant Tunneling in Tri-layer 2H-MoTe2 grown by Molecular Beam Epitaxy Coupled with layered WSe2 carrier Reservoir

• URL: http://arxiv.org/abs/2506.00971v2
• Date: Wed, 04 Jun 2025 18:51:59 GMT
• Title: Resonant Tunneling in Tri-layer 2H-MoTe2 grown by Molecular Beam Epitaxy Coupled with layered WSe2 carrier Reservoir
• Abstract summary: We report a prominent quantum oscillation in the conductance of 2H-MoTe2 based resonant tunneling structure.<n>In this work, a n-WSe2/HfO2/i-MoTe2/HfO2/Au resonant tunneling device (RTD) has been fabricated using Molecular Beam Epitaxy (MBE) grown 2H-MoTe2 and Chemical Vapor Deposition (CVD) grown 2H-WSe2.
• Score: 0.43975202913406947
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: Here, we report a prominent quantum oscillation in the conductance of 2H-MoTe2 based resonant tunneling structure. In this work, a n-WSe2/HfO2/i-MoTe2/HfO2/Au resonant tunneling device (RTD) with a symmetric and asymmetric double barrier has been fabricated using Molecular Beam Epitaxy (MBE) grown 2H-MoTe2 and Chemical Vapor Deposition (CVD) grown 2H-WSe2 along with theoretical modeling by adopting non-equilibrium Green function (NEGF) formalism. The impact of MoTe2-quantum well widths equal, and above its excitonic Bohr radius (EBR:0.7 nm) on resonant tunneling current is investigated at cryogenic temperatures. Such peak values increase with downscaling of the well width up to a certain value and then it decreases with further miniaturization. The corresponding maximum peak-to-valley current ratio (PVR) is estimated to be 4 at 4K in the low voltage range for the very first time in MoTe2 based RTD. Therefore, the present work may provide the route for fabrication of WSe2/MoTe2-based high performance resonant tunneling devices integrable with HEMT device for modern Qubit architecture operational at ultra-low temperatures.

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