The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC

• URL: http://arxiv.org/abs/2506.17478v1
• Date: Fri, 20 Jun 2025 20:49:33 GMT
• Title: The influence of nitrogen doping and annealing on the silicon vacancy in 4H-SiC
• Authors: Samuel G. Carter, Infiter Tathfif, Charity Burgess, Brenda VanMil, Suryakanti Debata, Pratibha Dev,
• Abstract summary: Doping plays a crucial role in SiC-based applications.<n>Nitrogen substituted for carbon is shown to very efficiently donate one electron to $V_Si$.<n>The ODMR contrast can be increased from 0.5% in low doped SiC to 1.5% by nitrogen doping.
• Score: 0.0
• License: http://creativecommons.org/licenses/by-nc-nd/4.0/
• Abstract: The silicon vacancy ($V_{Si}$) in 4H-SiC at its cubic site (V2-center) has shown significant promise for quantum technologies, due to coherent spin states, the mature material system, and stable optical emission. In these SiC-based applications, doping plays a crucial role. It can be used to control the charge state of $V_{Si}$ and formation of different types of defects. Despite its importance, there has been little research on the effects of doping. In this work, we perform a study of the effects of nitrogen doping and annealing on the photoluminescence (PL), optically-detected magnetic resonance (ODMR) contrast, and dephasing times of ensembles of V2 in epilayers of 4H-SiC. The results show an enhancement of PL that depends on the electron irradiation dose for a given electron concentration, supported by theoretical modeling of the charge state of $V_{Si}$ in the presence of nitrogen. Nitrogen substituted for carbon is shown to very efficiently donate one electron to $V_{Si}$. We also observe that the ODMR contrast can be increased from 0.5% in low doped SiC to 1.5% by nitrogen doping of $10^{17}$ to $10^{18}$ cm$^{-3}$ and annealing at 500-600 $^{\circ}$C for 1 hour, with only a 20% decrease in PL compared to unannealed. Some of the improvement in contrast is offset by a reduction in $T_2^*$ at these doping levels, but the estimated cw ODMR shot-noise limited sensitivity is still 1.6 times higher than that of undoped, unannealed SiC.

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