Investigation of tantalum films growth for coplanar resonators with internal quality factors above ten million

• URL: http://arxiv.org/abs/2509.04917v1
• Date: Fri, 05 Sep 2025 08:29:51 GMT
• Title: Investigation of tantalum films growth for coplanar resonators with internal quality factors above ten million
• Authors: E. V. Zikiy, N. S. Smirnov, E. A. Krivko, A. R. Matanin, A. I. Ivanov, E. I. Malevannaya, V. I. Polozov, S. V. Bukatin, D. A. Baklykov, I. A. Stepanov, S. A. Kotenkov, S. P. Bychkov, I. A. Ryzhikov, A. V. Andriyash, I. A. Rodionov,
• Abstract summary: We present a study on alpha-tantalum films growth on various substrate.<n>The decisive role of a substrate material Debye temperature on phase selection mechanism in tantalum films growth is experimentally confirmed.<n>We demonstrate compact tantalum resonators with an internal quality factor exceeding 10 million at single-photon excitation powers.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Alpha-tantalum on silicon is a promising platform for high-coherence superconducting quantum circuits. However, the growth mechanism of alpha-tantalum on silicon remains poorly understood. We present a comprehensive study on alpha-tantalum films growth on various substrate. The decisive role of a substrate material Debye temperature on phase selection mechanism in tantalum films growth is experimentally confirmed, contradicting the prior assumptions on substrate temperature influence. Crucially, we confirm that alpha-tantalum starts growing only after a 7-10 nm thick beta-tantalum underlayer. It results in ranging the critical temperature of {\alpha}-Ta films from 3.77 K to 4.39 K for the total thickness from 20 to 150 nm, respectively. Finally, we compared high-quality Al and Ta coplanar resonators on silicon, demonstrating compact tantalum resonators (4/10.5/4 um) with an internal quality factor exceeding 10 million at single-photon excitation powers.

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