Revisiting intrinsic spin defects in hexagonal boron nitride with r2SCAN
- URL: http://arxiv.org/abs/2509.09002v1
- Date: Wed, 10 Sep 2025 21:01:05 GMT
- Title: Revisiting intrinsic spin defects in hexagonal boron nitride with r2SCAN
- Authors: Petros-Panagis Filippatos, Tom J. P. Irons, Katherine Inzani,
- Abstract summary: hBN is highly promising for solid-state quantum technologies as a host of optically addressable, paramagnetic spin defects.<n>In intrinsic point defects in bulk hBN are modelled using density functional theory.<n>VB-, BN0, Bi+ and Ni+ defects are identified as stable colour centres with zero-phonon emission within technologically desirable wavelengths.
- Score: 0.0
- License: http://creativecommons.org/licenses/by/4.0/
- Abstract: Hexagonal boron nitride (hBN) is a wide band gap, van der Waals material that is highly promising for solid-state quantum technologies as a host of optically addressable, paramagnetic spin defects. Intrinsic and extrinsic point defects provide a range of emission energies, but the atomic-level structures related to observed transitions are not fully characterised. In this work, intrinsic point defects in bulk hBN are modelled using density functional theory at the level of the meta-generalized gradient approximation (meta-GGA), considering their formation energies, electronic spectra and magnetic properties. The meta-GGA exchange-correlation functional r2SCAN is found to offer a balance between accuracy and computational efficiency for specific properties, while its predictive performance for bound-exciton stability is limited when compared to higher-level hybrid functionals. This implies opportunities for its use in optimised, hierarchical computational defect screening workflows. Under revised criteria, VB-, BN0, Bi+ and Ni+ defects are identified as stable colour centres with zero-phonon emission within technologically desirable wavelengths, making them promising for use in quantum networks and sensors.
Related papers
- Energy-Transfer-Enhanced Emission and Quantum Sensing of VB- Defects in hBN-PbI2 Heterostructures [31.458406135473805]
Spin defects in two-dimensional materials hold significant potential for quantum information technologies and sensing applications.<n>This work establishes a proof-of-concept for amplifying weak defect signals in nanomaterials, highlighting a new strategy for engineering their optical and magnetic responses.
arXiv Detail & Related papers (2026-02-02T16:01:45Z) - Zero-field identification and control of hydrogen-related electron-nuclear spin registers in diamond [73.17247851945764]
We introduce an approach to identify the hyperfine components and nuclear spin species of spin defects through measurements on a nearby NV center.<n>Results provide a guide to resolving the defect structures using $textitab initio$ calculations.<n>Our characterization and control tools establish a framework to expand the defect landscape for hybrid electron-nuclear registers.
arXiv Detail & Related papers (2025-10-22T13:50:54Z) - Extracting Membrane-like hexagonal Boron Nitride hosting single Defect Centers for Resonator Integration [45.92397921863963]
Integration of membranes into optical resonators plays a key role in a variety of applications, including optomechanics.<n> Layered, two-dimensional materials have emerged as candidates for membranes hosting atom-like quantum emitters.<n>We develope a toolset of nano-scaled manipulation techniques to extract membrane-like structures of commercially-available hBN containing spectrally narrow single photon emitters.
arXiv Detail & Related papers (2025-08-19T16:22:58Z) - Disorder-Engineered Hybrid Plasmonic Cavities for Emission Control of Defects in hBN [0.0]
Defect-based quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for scalable quantum photonics.<n>This study demonstrates a low-cost, fabrication approach to integrate plasmonic nanocavities with defect-based quantum emitters in hBN nanoflakes.
arXiv Detail & Related papers (2025-06-17T13:46:15Z) - Electron-Electron Interactions in Device Simulation via Non-equilibrium Green's Functions and the GW Approximation [71.63026504030766]
electron-electron (e-e) interactions must be explicitly incorporated in quantum transport simulation.<n>This study is the first one reporting large-scale atomistic quantum transport simulations of nano-devices under non-equilibrium conditions.
arXiv Detail & Related papers (2024-12-17T15:05:33Z) - Quantum Emission from Coupled Spin Pairs in Hexagonal Boron Nitride [4.1020458874018795]
Optically addressable defect qubits in wide band gap materials are favorable candidates for room temperature quantum information processing.
The two-dimensional hexagonal boron nitride (hBN) is an attractive solid state platform with a great potential for hosting bright quantum emitters with quantum memories.
arXiv Detail & Related papers (2024-08-24T08:40:38Z) - Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride [62.170141783047974]
Single photon emitters hosted in hexagonal boron nitride (hBN) are essential building blocks for quantum photonic technologies that operate at room temperature.
We experimentally demonstrate large-area arrays of plasmonic nanoresonators for Purcell-induced site-controlled SPEs.
Our results offer arrays of bright, heterogeneously integrated quantum light sources, paving the way for robust and scalable quantum information systems.
arXiv Detail & Related papers (2024-05-03T23:02:30Z) - Optically-active spin defects in few-layer thick hexagonal boron nitride [0.0]
Optically-active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units.
We first demonstrate that the electron spin resonance frequencies of boron vacancy centres (V$_textB-$) can be detected optically in the limit of few-atomic-layer thick hBN flakes.
We then analyze the variations of the electronic spin properties of V$_textB-$ centres with the hBN thickness.
arXiv Detail & Related papers (2023-04-24T13:06:16Z) - Database of semiconductor point-defect properties for applications in
quantum technologies [54.17256385566032]
We have calculated over 50,000 point defects in various semiconductors including diamond, silicon carbide, and silicon.
We characterize the relevant optical and electronic properties of these defects, including formation energies, spin characteristics, transition dipole moments, zero-phonon lines.
We find 2331 composite defects which are stable in intrinsic silicon, which are then filtered to identify many new optically bright telecom spin qubit candidates and single-photon sources.
arXiv Detail & Related papers (2023-03-28T19:51:08Z) - Quantum sensing and imaging with spin defects in hexagonal boron nitride [2.8409310270487538]
Color centers in hexagonal boron nitride (hBN) have emerged as promising candidates for a new wave of quantum applications.
The recently discovered optically addressable spin defects in hBN provide a quantum interface between photons and electron spins for quantum sensing applications.
This review summarizes the rapidly evolving field of nanoscale and microscale quantum sensing with spin defects in hBN.
arXiv Detail & Related papers (2023-02-22T06:21:28Z) - Review on coherent quantum emitters in hexagonal boron nitride [91.3755431537592]
I discuss the state-of-the-art of defect centers in hexagonal boron nitride with a focus on optically coherent defect centers.
The spectral transition linewidth remains unusually narrow even at room temperature.
The field is put into a broad perspective with impact on quantum technology such as quantum optics, quantum photonics as well as spin optomechanics.
arXiv Detail & Related papers (2022-01-31T12:49:43Z) - Mechanical Decoupling of Quantum Emitters in Hexagonal Boron Nitride
from Low-Energy Phonon Modes [52.77024349608834]
Quantum emitters in hexagonal Boron Nitride (hBN) were recently reported to hol a homogeneous linewidth according to the Fourier-Transform limit up to room temperature.
This unusual observation was traced back to decoupling from in-plane phonon modes which can arise if the emitter is located between two planes of the hBN host material.
arXiv Detail & Related papers (2020-04-22T20:00:49Z)
This list is automatically generated from the titles and abstracts of the papers in this site.
This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.