Biphoton state generation and engineering with bright hybrid III-V/Silicon photonic devices

• URL: http://arxiv.org/abs/2511.07128v1
• Date: Mon, 10 Nov 2025 14:12:36 GMT
• Title: Biphoton state generation and engineering with bright hybrid III-V/Silicon photonic devices
• Authors: Lorenzo Lazzari, Jérémie Schuhmann, Othmane Meskine, Martina Morassi, Aristide Lemaître, Maria I. Amanti, Frédéric Boeuf, Fabrice Raineri, Florent Baboux, Sara Ducci,
• Abstract summary: Device is a heterogeneously integrated device that merges biphoton generation and on-chip quantum state engineering.<n>Design achieves a pair generation rate above 10$6$ s$-1$mW$-1$ and a coincidence-to-accidental ratio up to 600.
• Score: 0.0
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: Hybrid photonic circuits, harnessing the complementary strengths of multiple materials, represent a key resource to enable compact, scalable platforms for quantum technologies. In particular, the availability of bright sources of tunable biphoton states is eagerly awaited to meet the variety of applications currently under development. In this work we demonstrate a heterogeneously integrated device that merges biphoton generation and on-chip quantum state engineering, combining an AlGaAs photon-pair source with a CMOS-compatible silicon-on-insulator (SOI) circuit. Photon pairs are generated in the C telecom band via spontaneous parametric down-conversion and transferred to the SOI chip through a multimode evanescent coupling scheme. This design achieves a pair generation rate above 10$^{6}$ s$^{-1}$mW$^{-1}$ and a coincidence-to-accidental ratio up to 600. Crucially, the coupling design induces strong and predictable transformations of the biphoton joint spectral amplitude, enabling complex quantum state engineering entirely on-chip in a compact device compliant with electrical pumping.

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