Room-Temperature Electrical Readout of Spin Defects in van der Waals Materials

• URL: http://arxiv.org/abs/2511.08874v1
• Date: Thu, 13 Nov 2025 01:13:30 GMT
• Title: Room-Temperature Electrical Readout of Spin Defects in van der Waals Materials
• Authors: Shihao Ru, Liheng An, Haidong Liang, Zhengzhi Jiang, Zhiwei Li, Xiaodan Lyu, Feifei Zhou, Hongbing Cai, Yuzhe Yang, Ruihua He, Robert Cernansky, Edwin Hang Tong Teo, Manas Mukherjee, Andrew A. Bettiol, Jesus Zúñiga-Perez, Fedor Jelezko, Weibo Gao,
• Abstract summary: Negatively charged boron vacancy ($mathrmV_B-$) in hexagonal boron nitride (hBN) is the most extensively studied room-temperature quantum spin system in 2D materials.<n>In this study, we demonstrated a photoelectric spin readout technique for $mathrmV_B-$ spins in hBN.
• Score: 7.532635817613848
• License: http://creativecommons.org/licenses/by-nc-sa/4.0/
• Abstract: Negatively charged boron vacancy ($\mathrm{V_B^-}$) in hexagonal boron nitride (hBN) is the most extensively studied room-temperature quantum spin system in two-dimensional (2D) materials. Nevertheless, the current effective readout of $\mathrm{V_B^-}$ spin states is carried out by systematically optical methods. This limits their exploitation in compact and miniaturized quantum devices, which would otherwise hold substantial promise to address quantum sensing and quantum information tasks. In this study, we demonstrated a photoelectric spin readout technique for $\mathrm{V_B^-}$ spins in hBN. The observed photocurrent signals stem from the spin-dependent ionization dynamics of boron vacancies, mediated by spin-dependent non-radiative transitions to a metastable state. We further extend this electrical detection technique to enable the readout of dynamical decoupling sequences, including the Carr-Purcell-Meiboom-Gill (CPMG) protocols, and of nuclear spins via electron-nuclear double resonance. These results provide a pathway toward on-chip integration and real-field exploitation of quantum functionalities based on 2D material platforms.

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