Single-atom trapping in the evanescent field of an integrated photonic resonator

• URL: http://arxiv.org/abs/2605.09532v1
• Date: Sun, 10 May 2026 13:34:58 GMT
• Title: Single-atom trapping in the evanescent field of an integrated photonic resonator
• Abstract summary: We show efficient trapping of a single ultracold rubidium atom within the evanescent field of an integrated silicon-nitride microring resonator.<n>Results establish the potential of CMOS-compatible chip-based atom-photon interfaces for scalable quantum photonic circuits.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Strong atom-photon interactions on scalable photonic platforms hold significant potential for both atomic and photonic quantum information platforms. In particular, trapping of a single atom on a planar photonic integrated resonator at the subwavelength distances required for strong coupling to the guided modes has remained an outstanding challenge. Here we demonstrate efficient trapping of a single ultracold rubidium atom within the evanescent field of an integrated silicon-nitride microring resonator, at distances of 150-200 nm from the chip surface. Efficient, single-stroke loading process is achieved using an evanescent-field mechanism related to Sisyphus cooling, in which a single scattering event dissipates the atom's kinetic energy and transfers it into a near-surface trap. We observe logarithmic scaling of trapping durations spanning from sub-millisecond timescales up to 1 second, without continuous cooling. The trapped atom couples efficiently to the resonator, enabling on-chip photon collection, photon antibunching, and Purcell-enhanced spontaneous emission with single-atom cooperativity exceeding unity. Our results establish the potential of CMOS-compatible chip-based atom-photon interfaces for scalable quantum photonic circuits.

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