SiMOS quantum-dot spin qubits enabled by extreme-ultraviolet lithography

• URL: http://arxiv.org/abs/2607.13121v1
• Date: Tue, 14 Jul 2026 17:13:24 GMT
• Title: SiMOS quantum-dot spin qubits enabled by extreme-ultraviolet lithography
• Abstract summary: We demonstrate high-performance silicon metal-oxide-semiconductor (SiMOS) spin qubits fabricated using extreme-ultraviolet (EUV) lithography.<n>EUV lithography is a viable manufacturing technology for quantum processors based on high-fidelity SiMOS spin qubits.
• Score: 0.825976035671465
• License: http://creativecommons.org/licenses/by-nc-nd/4.0/
• Abstract: The realization of large-scale silicon quantum processors requires spin qubits compatible with advanced semiconductor manufacturing technologies, demanding lithographic processes that combine nanometer-scale precision with exceptional uniformity. Although the highest-performing silicon spin qubits demonstrated to date have relied on electron-beam (e-beam) lithography, its serial exposure process limits reproducibility studies and wafer-scale fabrication. Here, we demonstrate high-performance silicon metal-oxide-semiconductor (SiMOS) spin qubits fabricated using extreme-ultraviolet (EUV) lithography in a 300 mm semiconductor pilot line. We report wafer-scale quantum-dot uniformity metrics, including 100 % room-temperature gate-to-gate leakage yield and sub-nanometer control of critical gate dimensions. We characterize four double-dot systems realized in two triple-quantum-dot devices. Gate set tomography (GST) reveals consistently high fidelities across all four systems, with values up to 99.8 % for SPAM, 99.9 % for single-qubit gates, and 99.1 % for two-qubit gates. The devices exhibit highly reproducible exchange turn-on characteristics of 10-13 dec/V, indicating high fabrication uniformity enabled by EUV patterning. These results establish EUV lithography as a viable manufacturing technology for quantum processors based on high-fidelity SiMOS spin qubits.

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