Low loss superconducting resonators enabled by aluminum microstructural engineering and dielectric trimming

• URL: http://arxiv.org/abs/2607.22265v2
• Date: Tue, 28 Jul 2026 15:40:33 GMT
• Title: Low loss superconducting resonators enabled by aluminum microstructural engineering and dielectric trimming
• Abstract summary: Losses in superconducting circuits limit qubit coherence times and resonator quality factors.<n>In this work, we link the aluminum film grain size to non-TLS losses and the dielectric trimming profile and roughness to TLS loss.<n>To reduce metal-related losses, we engineer the aluminum microstructure by heating during deposition, increasing grain size and reducing grain boundary density.
• Score: 0.772922137604599
• License: http://creativecommons.org/licenses/by-nc-nd/4.0/
• Abstract: Material losses in superconducting circuits fundamentally limit qubit coherence times and resonator quality factors. Most research efforts focus on mitigating losses at circuit interfaces, including metal--substrate, substrate--air, and metal--air interfaces. However, the correlation between TLS and non-TLS losses with the intrinsic properties of the superconducting metal and the dielectric edge smoothness is not well studied. In this work, we link the aluminum film grain size to non-TLS losses and the dielectric trimming profile and roughness to TLS loss; both loss mechanisms are subsequently mitigated. To reduce metal-related losses, we engineer the aluminum microstructure by heating during deposition, increasing grain size and reducing grain boundary density. Beyond mitigating metal losses, we introduce a two-step etching technique, Tropic etching, to suppress dielectric TLS loss by producing an ultra-smooth silicon surface with minimal defects and redeposition. These results lay out the fabrication pathway for aluminum resonators with lower loss, demonstrating two-orders-of-magnitude improvement in quality factor from $6\times10^{4}$ to $2.3\times10^{6}$. Since aluminum is the basis for most high-coherence Josephson junctions and dielectric edges are inherent to all common device geometries, the improvements in aluminum microstructure and edge profiling, presented here, can enhance the performance of superconducting quantum devices.

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