Improving the lifetime of aluminum-based superconducting qubits through atomic layer etching and deposition

• URL: http://arxiv.org/abs/2506.17474v1
• Date: Fri, 20 Jun 2025 20:41:53 GMT
• Title: Improving the lifetime of aluminum-based superconducting qubits through atomic layer etching and deposition
• Authors: Neha Mahuli, Joaquin Minguzzi, Jiansong Gao, Rachel Resnick, Sandra Diez, Cosmic Raj, Guillaume Marcaud, Matthew Hunt, Loren Swenson, Jefferson Rose, Oskar Painter, Ignace Jarrige,
• Abstract summary: We present a dry surface treatment combining atomic layer etching and deposition (ALE and ALD) to mitigate dielectric loss in superconducting quantum devices formed from aluminum thin films on silicon.<n>We measure a two-fold reduction in loss attributed to two-level system absorption in treated aluminum-based resonators and planar transmon qubits.
• Score: 0.11785699115424035
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: We present a dry surface treatment combining atomic layer etching and deposition (ALE and ALD) to mitigate dielectric loss in fully fabricated superconducting quantum devices formed from aluminum thin films on silicon. The treatment, performed as a final processing step prior to device packaging, starts by conformally removing the native metal oxide and fabrication residues from the exposed surfaces through ALE before \textit{in situ} encapsulating the metal surfaces with a thin dielectric layer using ALD. We measure a two-fold reduction in loss attributed to two-level system (TLS) absorption in treated aluminum-based resonators and planar transmon qubits. Treated transmons with compact capacitor plates and gaps achieve median $Q$ and $T_1$ values of $3.69 \pm 0.42 \times 10^6$ and $196 \pm 22$~$\mu$s, respectively. These improvements were found to be sustained over several months. We discuss how the combination of ALE and ALD reverses fabrication-induced surface damages to significantly and durably improve device performance via a reduction of the TLS defect density in the capacitive elements.

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