Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide

• URL: http://arxiv.org/abs/2002.02613v2
• Date: Sun, 2 Oct 2022 10:10:58 GMT
• Title: Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide
• Authors: Zhao Mu, S.A.Zargaleh, H. J. von Bardeleben, Johannes E. Fr\"och, Hongbing Cai, Xinge Yang, Jianqun Yang, Xingji Li, Igor Aharonovich, Weibo Gao
• Abstract summary: We show optically detected magnetic resonance (ODMR) with resonant excitation, and clearly identified the ground state energy levels of the NV centers in 4H-SiC. We also show the successful generation and characterization of single nitrogen vacancy (NV) center in SiC employing ion implantation.
• Score: 0.5623903002844935
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Silicon carbide (SiC) has become a key player in realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic resonance (ODMR) with resonant excitation, and clearly identified the ground state energy levels of the NV centers in 4H-SiC. Coherent manipulation of NV centers in SiC has been achieved with Rabi and Ramsey oscillations. Finally, we show the successful generation and characterization of single nitrogen vacancy (NV) center in SiC employing ion implantation. Our results are highlighting the key role of NV centers in SiC as a potential candidate for quantum information processing.

Related papers

• Purcell enhancement and spin spectroscopy of silicon vacancy centers in silicon carbide using an ultra-small mode-volume plasmonic cavity [0.0]
  We report the integration of V$_Si$ centers with a plasmonic nanocavity to enhance the emission. The results highlight the potential of nanophotonic structures for advancing quantum networking technologies.
  arXiv  Detail & Related papers  (2024-07-08T13:51:10Z)
• Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams [0.0]
  We develop and use a carbon source for focused ion beams for the simultaneous creation of two types of quantum emitters in silicon. Our experimental demonstration is an important step towards nanoscale engineering of telecom quantum emitters in silicon of high crystalline quality and isotope purity.
  arXiv  Detail & Related papers  (2024-04-30T14:36:31Z)
• Control of an environmental spin defect beyond the coherence limit of a central spin [79.16635054977068]
  We present a scalable approach to increase the size of electronic-spin registers. We experimentally realize this approach to demonstrate the detection and coherent control of an unknown electronic spin outside the coherence limit of a central NV. Our work paves the way for engineering larger quantum spin registers with the potential to advance nanoscale sensing, enable correlated noise spectroscopy for error correction, and facilitate the realization of spin-chain quantum wires for quantum communication.
  arXiv  Detail & Related papers  (2023-06-29T17:55:16Z)
• Identification of acoustically induced spin resonances of Si vacancy centers in 4H-SiC [0.0]
  We show that the dynamic strain of surface acoustic waves can overcome the limitation of spin control above cryogenic temperatures. The acoustic spin control of both kinds of $mathrmV_mathrmSi$ centers in their excited states opens new ways for applications in quantum technologies based on spin-optomechanics.
  arXiv  Detail & Related papers  (2022-12-15T10:27:38Z)
• All-Optical Nuclear Quantum Sensing using Nitrogen-Vacancy Centers in Diamond [52.77024349608834]
  Microwave or radio-frequency driving poses a significant limitation for miniaturization, energy-efficiency and non-invasiveness of quantum sensors. We overcome this limitation by demonstrating a purely optical approach to coherent quantum sensing. Our results pave the way for highly compact quantum sensors to be employed for magnetometry or gyroscopy applications.
  arXiv  Detail & Related papers  (2022-12-14T08:34:11Z)
• Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide [1.6492256668939613]
  We study the spin-optical dynamics of single silicon vacancy center at hexagonal lattice sites, namely V1, in 4H-polytype silicon carbide. By utilizing resonant and above-resonant sub-lifetime pulsed excitation, we determine spin-dependent excited-state lifetimes and intersystem-crossing rates.
  arXiv  Detail & Related papers  (2022-03-15T18:12:17Z)
• Five-second coherence of a single spin with single-shot readout in silicon carbide [84.97423065534817]
  We demonstrate single-shot readout of single defects in silicon carbide (SiC) We achieve over 80% readout fidelity without pre- or post-selection. We report single spin T2 > 5s, over two orders of magnitude greater than previously reported in this system.
  arXiv  Detail & Related papers  (2021-10-04T17:35:02Z)
• Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties [1.3246119976070139]
  We demonstrate nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. We show nearly transform limited photon emission and record spin coherence times for single defects generated via ion implantation and in triangular cross section waveguides. For the latter, we show further controlled operations on nearby nuclear spin qubits, which is crucial for fault-tolerant quantum information distribution.
  arXiv  Detail & Related papers  (2021-09-10T08:42:14Z)
• Near-Field Terahertz Nanoscopy of Coplanar Microwave Resonators [61.035185179008224]
  Superconducting quantum circuits are one of the leading quantum computing platforms. To advance superconducting quantum computing to a point of practical importance, it is critical to identify and address material imperfections that lead to decoherence. Here, we use terahertz Scanning Near-field Optical Microscopy to probe the local dielectric properties and carrier concentrations of wet-etched aluminum resonators on silicon.
  arXiv  Detail & Related papers  (2021-06-24T11:06:34Z)
• Demonstration of electron-nuclear decoupling at a spin clock transition [54.088309058031705]
  Clock transitions protect molecular spin qubits from magnetic noise. linear coupling to nuclear degrees of freedom causes a modulation and decay of electronic coherence. An absence of quantum information leakage to the nuclear bath provides opportunities to characterize other decoherence sources.
  arXiv  Detail & Related papers  (2021-06-09T16:23:47Z)
• Entanglement and control of single quantum memories in isotopically engineered silicon carbide [89.42372489576658]
  Nuclear spins in the solid state are both a cause of decoherence and a valuable resource for spin qubits. We demonstrate control of isolated 29Si nuclear spins in silicon carbide (SiC) to create an entangled state between an optically active divacancy spin and a strongly coupled nuclear register.
  arXiv  Detail & Related papers  (2020-05-15T15:45:34Z)

This list is automatically generated from the titles and abstracts of the papers in this site.

This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.