Tunable cavity coupling to spin defects in 4H-silicon-carbide-on-insulator platform

• URL: http://arxiv.org/abs/2412.20039v1
• Date: Sat, 28 Dec 2024 06:11:08 GMT
• Title: Tunable cavity coupling to spin defects in 4H-silicon-carbide-on-insulator platform
• Authors: Tongyuan Bao, Qi Luo, Ailun Yin, Yao Zhang, Haibo Hu, Zhengtong Liu, Shumin Xiao, Xin Ou, Yu Zhou, Qinghai Song,
• Abstract summary: Integration of PL4 divacancy spin defects into micro-ring cavities in scalable thin-film 4H-SiC nanophotonics. These advancements lay the foundation for developing SiC-based quantum photonic circuits.
• Score: 10.663173488976133
• License:
• Abstract: Silicon carbide (SiC) has attracted significant attention as a promising quantum material due to its ability to host long-lived, optically addressable color centers with solid-state photonic interfaces. The CMOS compatibility of 4H-SiCOI (silicon-carbide-on-insulator) makes it an ideal platform for integrated quantum photonic devices and circuits. While micro-ring cavities have been extensively studied in SiC and other materials, the integration of 4H-SiC spin defects into these critical structures, along with continuous mode tunability, remains unexplored. In this work, we demonstrate the integration of PL4 divacancy spin defects into tunable micro-ring cavities in scalable thin-film 4H-SiC nanophotonics. Comparing on- and off-resonance conditions, we observed an enhancement of the Purcell factor by approximately 5.0. This enhancement effectively confined coherent photons within the coupled waveguide, leading to a twofold increase in the ODMR (optically detected magnetic resonance) contrast and coherent control of PL4 spins. These advancements lay the foundation for developing SiC-based quantum photonic circuits.

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