Fabrication process and failure analysis for robust quantum dots in silicon

• URL: http://arxiv.org/abs/2004.05683v3
• Date: Tue, 15 Sep 2020 16:48:33 GMT
• Title: Fabrication process and failure analysis for robust quantum dots in silicon
• Authors: J. P. Dodson (1), Nathan Holman (1), Brandur Thorgrimsson (1), Samuel F. Neyens (1), E. R. MacQuarrie (1), Thomas McJunkin (1), Ryan H. Foote (1), L. F. Edge (2), S. N. Coppersmith (1 and 3), M. A. Eriksson (1) ((1) Department of Physics, University of Wisconsin-Madison, Madison, WI, USA, (2) HRL Laboratories, LLC, Malibu, CA, USA, (3) University of New South Wales, Sydney, Australia)
• Abstract summary: We present an improved fabrication process for overlapping aluminum gate quantum dot devices on Si/SiGe heterostructures. This process reduces gate-to-gate leakage, damage from ESD, dewetting of aluminum, and formation of undesired alloys in device interconnects.
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• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: We present an improved fabrication process for overlapping aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic discharge (ESD) protection, and an optimized interconnect process for thermal budget considerations. This process reduces gate-to-gate leakage, damage from ESD, dewetting of aluminum, and formation of undesired alloys in device interconnects. Additionally, cross-sectional scanning transmission electron microscopy (STEM) images elucidate gate electrode morphology in the active region as device geometry is varied. We show that overlapping aluminum gate layers homogeneously conform to the topology beneath them, independent of gate geometry, and identify critical dimensions in the gate geometry where pattern transfer becomes non-ideal, causing device failure.

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