Design aspects of dual gate GaAs nanowire FET for room temperature charge qubit operation: A study on diameter and gate engineering

• URL: http://arxiv.org/abs/2304.10554v1
• Date: Thu, 20 Apr 2023 11:03:19 GMT
• Title: Design aspects of dual gate GaAs nanowire FET for room temperature charge qubit operation: A study on diameter and gate engineering
• Authors: Nilayan Paul, Basudev Nag Chowdhury, Sanatan Chattopadhyay
• Abstract summary: The study shows that the Bloch sphere coverage can be discretized along polar and azimuthal directions by reducing the nanowire diameter and increasing the inter-dot separation respectively. The proposed GaAs VTQD-based qubit may be significantly improved by scaling down both the nanowire diameter and gate separation.
• Score: 0.0
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: The current work explores a geometrically engineered dual gate GaAs nanowire FET with state of the art miniaturized dimensions for high performance charge qubit operation at room temperature. Relevant gate voltages in such device can create two voltage tunable quantum dots (VTQDs) underneath the gates, as well as can manipulate their eigenstate detuning and the inter-dot coupling to generate superposition, whereas a small drain bias may cause its collapse leading to qubit read out. Such qubit operations, i.e., Initialization, Manipulation, and Measurement, are theoretically modeled in the present work by developing a second quantization filed operator based Schrodinger-Poisson self-consistent framework coupled to non-equilibrium Greens function formalism. The study shows that the Bloch sphere coverage can be discretized along polar and azimuthal directions by reducing the nanowire diameter and increasing the inter-dot separation respectively, that can be utilized for selective information encoding. The theoretically obtained stability diagrams suggest that downscaled nanowire diameter and increased gate separation sharpen the bonding and anti-bonding states with reduced anticrossing leading to a gradual transformation of the hyperbolic current mapping into a pair of straight lines. However, the dephasing time in the proposed GaAs VTQD-based qubit may be significantly improved by scaling down both the nanowire diameter and gate separation. Therefore, the present study suggests an optimization window for geometrical engineering of a dual gate nanowire FET qubit to achieve superior qubit performance. Most importantly, such device is compatible with the mainstream CMOS technology and can be utilized for large scale implementation by little modification of the state of the art fabrication processes.

Related papers

• Transport properties and quantum phase transitions in one-dimensional superconductor-ferromagnetic insulator heterostructures [44.99833362998488]
  We propose a one-dimensional electronic nanodevice inspired in recently fabricated semiconductor-superconductor-ferromagnetic insulator hybrids. We show that the device can be tuned across spin- and fermion parity-changing QPTs by adjusting the FMI layer length orange and/or by applying a global backgate voltage. Our findings suggest that these effects are experimentally accessible and offer a robust platform for studying quantum phase transitions in hybrid nanowires.
  arXiv  Detail & Related papers  (2024-10-18T22:25:50Z)
• Cavity-enhanced superconductivity via band engineering [0.0]
  We consider a two-dimensional electron gas interacting with a quantized cavity mode. We find that the coupling between the electrons and the photons in the cavity enhances the superconducting gap.
  arXiv  Detail & Related papers  (2024-05-14T14:21:02Z)
• Ab-Initio Calculations of Nonlinear Susceptibility and Multi-Phonon Mixing Processes in a 2DEG-Piezoelectric Heterostructure [41.94295877935867]
  Solid-state elastic-wave phonons are a promising platform for a wide range of quantum information applications. We propose a general architecture using piezoelectric-semiconductor heterostructures. We show that, for this system, the strong third-order nonlinearity could enable single-phonon Kerr shift in an acoustic cavity.
  arXiv  Detail & Related papers  (2024-02-01T03:34:41Z)
• Control of an environmental spin defect beyond the coherence limit of a central spin [79.16635054977068]
  We present a scalable approach to increase the size of electronic-spin registers. We experimentally realize this approach to demonstrate the detection and coherent control of an unknown electronic spin outside the coherence limit of a central NV. Our work paves the way for engineering larger quantum spin registers with the potential to advance nanoscale sensing, enable correlated noise spectroscopy for error correction, and facilitate the realization of spin-chain quantum wires for quantum communication.
  arXiv  Detail & Related papers  (2023-06-29T17:55:16Z)
• Enhancing the Coherence of Superconducting Quantum Bits with Electric Fields [62.997667081978825]
  We show that qubit coherence can be improved by tuning defects away from the qubit resonance using an applied DC-electric field. We also discuss how local gate electrodes can be implemented in superconducting quantum processors to enable simultaneous in-situ coherence optimization of individual qubits.
  arXiv  Detail & Related papers  (2022-08-02T16:18:30Z)
• First- and second-order gradient couplings to NV centers engineered by the geometric symmetry [21.439773541873535]
  nanowires with different geometries can induce a tunable magnetic field gradient because of their geometric symmetries. A straight nanowire can guarantee the Jaynes-Cummings (JC) spin-phonon interaction and may indicate a potential route towards the application on quantum measurement.
  arXiv  Detail & Related papers  (2022-04-11T02:40:57Z)
• Tuning long-range fermion-mediated interactions in cold-atom quantum simulators [68.8204255655161]
  Engineering long-range interactions in cold-atom quantum simulators can lead to exotic quantum many-body behavior. Here, we propose several tuning knobs, accessible in current experimental platforms, that allow to further control the range and shape of the mediated interactions.
  arXiv  Detail & Related papers  (2022-03-31T13:32:12Z)
• Dual-Gate GaAs-Nanowire FET for Room Temperature Charge-Qubit Operation: A NEGF Approach [0.0]
  This work investigates the performance of dual-gate GaAs-nanowire FET as a charge-qubit device operating at room temperature. Two voltage tunable quantum dots are created within the nanowire channel with electrostatically controlled single-state-occupancy and inter-dot coupling. A 25 MHz frequency of coherent oscillation is observed for the qubit and a characteristic decay time of 70 ns is achieved.
  arXiv  Detail & Related papers  (2021-10-30T13:26:35Z)
• Optimizing lateral quantum dot geometries for reduced exchange noise [0.0]
  This work explores how the physical device affects the sensitivity of exchange to fluctuations in applied gate voltage and interdot bias due to charge noise. We present a modified linear combination of harmonic orbitals interaction (LCHO-CI) method for calculating exchange energies.
  arXiv  Detail & Related papers  (2020-12-18T21:06:49Z)
• A natural heavy-hole flopping mode qubit in germanium [0.0]
  Flopping mode qubits in double quantum dots (DQDs) allow for coherent spin-photon hybridization and fast qubit gates. electronic systems rely on synthetic spin-orbit interaction (SOI) by means of a magnetic field gradient as a coupling mechanism. We show that this challenging experimental setup can be avoided in heavy-hole (HH) systems in germanium (Ge) by utilizing the sizeable cubic Rashba SOI.
  arXiv  Detail & Related papers  (2020-12-18T13:17:52Z)
• Entanglement generation via power-of-SWAP operations between dynamic electron-spin qubits [62.997667081978825]
  Surface acoustic waves (SAWs) can create moving quantum dots in piezoelectric materials. We show how electron-spin qubits located on dynamic quantum dots can be entangled.
  arXiv  Detail & Related papers  (2020-01-15T19:00:01Z)

This list is automatically generated from the titles and abstracts of the papers in this site.

This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.