Characterization of process-related interfacial dielectric loss in aluminum-on-silicon by resonator microwave measurements, materials analysis, and imaging

• URL: http://arxiv.org/abs/2403.00723v1
• Date: Fri, 1 Mar 2024 18:16:28 GMT
• Title: Characterization of process-related interfacial dielectric loss in aluminum-on-silicon by resonator microwave measurements, materials analysis, and imaging
• Authors: Lert Chayanun, Janka Bizn\'arov\'a, Lunjie Zeng, Per Malmberg, Andreas Nylander, Amr Osman, Marcus Rommel, Pui Lam Tam, Eva Olsson, August Yurgens, Jonas Bylander, Anita Fadavi Roudsari
• Abstract summary: We investigate the influence of the fabrication process on dielectric loss in aluminum-on-silicon superconducting coplanar waveguide resonators. These devices are essential components in superconducting quantum processors. We identify the relative importance of reducing loss at the substrate-metal and the substrate-air interfaces.
• Score: 0.0
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: We systematically investigate the influence of the fabrication process on dielectric loss in aluminum-on-silicon superconducting coplanar waveguide resonators with internal quality factors ($Q_i$) of about one million at the single-photon level. These devices are essential components in superconducting quantum processors; they also serve as proxies for understanding the energy loss of superconducting qubits. By systematically varying several fabrication steps, we identify the relative importance of reducing loss at the substrate-metal and the substrate-air interfaces. We find that it is essential to clean the silicon substrate in hydrogen fluoride (HF) prior to aluminum deposition. A post-fabrication removal of the oxides on the surface of the silicon substrate and the aluminum film by immersion in HF further improves the $Q_i$. We observe a small, but noticeable, adverse effect on the loss by omitting either standard cleaning (SC1), pre-deposition heating of the substrate to 300$\deg$C, or in-situ post-deposition oxidation of the film's top surface. We find no improvement due to excessive pumping meant to reach a background pressure below $6{\times} 10^{-8}$ mbar. We correlate the measured loss with microscopic properties of the substrate-metal interface through characterization with X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectroscopy (ToF-SIMS), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM).

Related papers

• Crystallinity in Niobium oxides: A pathway to mitigate Two-Level System Defects in Niobium 3D Resonator for quantum applications [0.0]
  Two-level-system (TLS) defects are a major source of decoherence in superconducting quantum circuits. We demonstrate the reduction of two-level system losses in three-dimensional superconducting radio frequency (SRF) niobium resonators by a 10-hour high vacuum heat treatment at 650degC.
  arXiv  Detail & Related papers  (2024-10-09T12:02:32Z)
• Single photon emitters in monolayer semiconductors coupled to transition metal dichalcogenide nanoantennas on silica and gold substrates [49.87501877273686]
  Transition metal dichalcogenide (TMD) single photon emitters offer numerous advantages to quantum information applications. Traditional materials used for the fabrication of nanoresonators, such as silicon or gallium phosphide (GaP), often require a high refractive index substrate. Here, we use nanoantennas (NAs) fabricated from multilayer TMDs, which allow complete flexibility with the choice of substrate.
  arXiv  Detail & Related papers  (2024-08-02T07:44:29Z)
• Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride [62.170141783047974]
  Single photon emitters hosted in hexagonal boron nitride (hBN) are essential building blocks for quantum photonic technologies that operate at room temperature. We experimentally demonstrate large-area arrays of plasmonic nanoresonators for Purcell-induced site-controlled SPEs. Our results offer arrays of bright, heterogeneously integrated quantum light sources, paving the way for robust and scalable quantum information systems.
  arXiv  Detail & Related papers  (2024-05-03T23:02:30Z)
• Reducing two-level system dissipations in 3D superconducting Niobium resonators by atomic layer deposition and high temperature heat treatment [4.520721347047517]
  We demonstrate the reduction of two-level system losses in three-dimensional superconducting radio frequency (SRF) niobium resonators by atomic layer deposition (ALD) of a 10 nm aluminum oxide Al2O3 thin films. We witness a dissolution of niobium native oxides and the modification of the Al2O3-Nb interface.
  arXiv  Detail & Related papers  (2024-02-06T16:40:52Z)
• Quantum Emitters in Aluminum Nitride Induced by Zirconium Ion Implantation [70.64959705888512]
  This study investigates aluminum nitride (AlN) as a material with properties highly suitable for integrated on-chip photonics. We conduct a comprehensive study of the creation and photophysical properties of single-photon emitters in AlN utilizing Zirconium (Zr) and Krypton (Kr) heavy ion implantation. With the 532 nm excitation wavelength, we found that single-photon emitters induced by ion implantation are primarily associated with vacancy-type defects in the AlN lattice for both Zr and Kr ions.
  arXiv  Detail & Related papers  (2024-01-26T03:50:33Z)
• Mitigation of interfacial dielectric loss in aluminum-on-silicon superconducting qubits [0.0]
  We demonstrate aluminum-on-Silicon planar transmon qubits with time-averaged energy relaxation times of up to $270,mu s$, corresponding to Q = 5 million, and a highest observed value of $501,mu s$. The mitigation of loss is achieved by reducing the presence of oxide, a known host of defects, near the substrate-metal interface.
  arXiv  Detail & Related papers  (2023-10-10T17:08:59Z)
• High-Q trenched aluminum coplanar resonators with an ultrasonic edge microcutting for superconducting quantum devices [0.0]
  Dielectric losses are one of the key factors limiting the coherence of superconducting qubits. We report on superconducting CPW microwave resonators with internal quality factors exceeding 5x106 at high powers and 2x106 at low power. Josephson junction compatible CPW resonators fabrication process with both airbridges and silicon substrate etching is proposed.
  arXiv  Detail & Related papers  (2023-06-28T15:25:37Z)
• Microwave loss characterization using multi-mode superconducting resonators [0.0]
  We introduce a method to measure the microwave losses of materials and interfaces with a single multi-mode superconducting resonator. We present two types of multi-mode superconducting resonators for the study of bulk superconductors.
  arXiv  Detail & Related papers  (2023-05-03T03:10:41Z)
• Bipolar single-molecule electroluminescence and electrofluorochromism [50.591267188664666]
  We investigate cationic and anionic fluorescence of individual zinc phthalocyanine (ZnPc) molecules adsorbed on ultrathin NaCl films on Ag (111) by using STML. They depend on the tip-sample bias polarity and appear at threshold voltages that are correlated with the onset energies of particular molecular orbitals.
  arXiv  Detail & Related papers  (2022-10-20T09:22:45Z)
• Ternary Metal Oxide Substrates for Superconducting Circuits [65.60958948226929]
  Substrate material imperfections and surface losses are one of the major factors limiting superconducting quantum circuitry from reaching the scale and complexity required to build a practicable quantum computer. Here, we examine two ternary metal oxide materials, spinel (MgAl2O4) and lanthanum aluminate (LaAlO3), with a focus on surface and interface characterization and preparation.
  arXiv  Detail & Related papers  (2022-01-17T06:10:15Z)
• TOF-SIMS Analysis of Decoherence Sources in Nb Superconducting Resonators [48.7576911714538]
  Superconducting qubits have emerged as a potentially foundational platform technology. Material quality and interfacial structures continue to curb device performance. Two-level system defects in the thin film and adjacent regions introduce noise and dissipate electromagnetic energy.
  arXiv  Detail & Related papers  (2021-08-30T22:22:47Z)

This list is automatically generated from the titles and abstracts of the papers in this site.

This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.