Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast

• URL: http://arxiv.org/abs/2005.07876v2
• Date: Thu, 8 Jul 2021 06:34:29 GMT
• Title: Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast
• Authors: Qiang Li, Jun-Feng Wang, Fei-Fei Yan, Ji-Yang Zhou, Han-Feng Wang, He Liu, Li-Ping Guo, Xiong Zhou, Adam Gali, Zheng-Hao Liu, Zu-Qing Wang, Kai Sun, Guo-Ping Guo, Jian-Shun Tang, Hao Li, Li-Xing You, Jin-Shi Xu, Chuan-Feng Li, and Guang-Can Guo
• Abstract summary: We present the coherent manipulation of single divacancy spins in 4H-SiC with a high readout contrast. Since the high readout contrast is of utmost importance in many applications of quantum technologies, this work might open a new territory for SiC-based quantum devices.
• Score: 15.866408480835657
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Spin defects in silicon carbide (SiC) with mature wafer-scale fabrication and micro/nano-processing technologies have recently drawn considerable attention. Although room temperature single-spin manipulation of colour centres in SiC has been demonstrated, the typically detected contrast is less than 2%, and the photon count rate is also low. Here, we present the coherent manipulation of single divacancy spins in 4H-SiC with a high readout contrast (-30%) and a high photon count rate (150 kilo counts per second) under ambient conditions, which are competitive with the nitrogen-vacancy (NV) centres in diamond. Coupling between a single defect spin and a nearby nuclear spin is also observed. We further provide a theoretical explanation for the high readout contrast by analysing the defect levels and decay paths. Since the high readout contrast is of utmost importance in many applications of quantum technologies, this work might open a new territory for SiC-based quantum devices with many advanced properties of the host material.

Related papers

• Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride [62.170141783047974]
  Single photon emitters hosted in hexagonal boron nitride (hBN) are essential building blocks for quantum photonic technologies that operate at room temperature. We experimentally demonstrate large-area arrays of plasmonic nanoresonators for Purcell-induced site-controlled SPEs. Our results offer arrays of bright, heterogeneously integrated quantum light sources, paving the way for robust and scalable quantum information systems.
  arXiv  Detail & Related papers  (2024-05-03T23:02:30Z)
• Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation [11.870772746298043]
  We present a protocol for the scalable and targeted fabrication of single divacancies in 4H-SiC using a high-resolution focused helium ion beam. By measuring the ionization rate for different polytypes of divacancies, we found that the divacancies within stacking faults are more robust against resonant excitation. These findings highlight the immense potential of SiC divacancies for on-chip quantum photonics and the construction of efficient spin-to-photon interfaces.
  arXiv  Detail & Related papers  (2024-02-20T13:27:25Z)
• Experimental Generation of Spin-Photon Entanglement in Silicon Carbide [9.89461825381694]
  We experimentally generate entanglement between a silicon vacancy defect in silicon carbide and a scattered single photon in the zero-phonon line. Photonic qubit is encoded in the time-bin degree-of-freedom and measured using an unbalanced Mach-Zehnder interferometer.
  arXiv  Detail & Related papers  (2023-11-29T08:52:18Z)
• The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics [1.7041006547324578]
  We study the intrinsic spin dynamics of negatively charged $rm V_Si-$ center in 4H-SiC. We propose a realistic implementation of time-bin entangled multi-photon GHZ and cluster state generation. We find that up to 3-photon GHZ/cluster states are readily within reach using the existing nanophotonic cavity technology.
  arXiv  Detail & Related papers  (2023-07-25T16:58:55Z)
• Microwave-based quantum control and coherence protection of tin-vacancy spin qubits in a strain-tuned diamond membrane heterostructure [54.501132156894435]
  Tin-vacancy center (SnV) in diamond is a promising spin-photon interface with desirable optical and spin properties at 1.7 K. We introduce a new platform that overcomes these challenges - SnV centers in uniformly strained thin diamond membranes. The presence of crystal strain suppresses temperature dependent dephasing processes, leading to a considerable improvement of the coherence time up to 223 $mu$s at 4 K.
  arXiv  Detail & Related papers  (2023-07-21T21:40:21Z)
• A quantum coherent spin in a two-dimensional material at room temperature [2.105208778179199]
  Quantum networks and sensing require solid-state spin-photon interfaces that combine single-photon generation and long-lived spin coherence. We report quantum coherent control under ambient conditions of a single-photon emitting defect spin in a two-dimensional material.
  arXiv  Detail & Related papers  (2023-06-22T16:37:11Z)
• Five-second coherence of a single spin with single-shot readout in silicon carbide [84.97423065534817]
  We demonstrate single-shot readout of single defects in silicon carbide (SiC) We achieve over 80% readout fidelity without pre- or post-selection. We report single spin T2 > 5s, over two orders of magnitude greater than previously reported in this system.
  arXiv  Detail & Related papers  (2021-10-04T17:35:02Z)
• Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties [1.3246119976070139]
  We demonstrate nanoscale fabrication of silicon vacancy centres (VSi) in 4H-SiC without deterioration of their intrinsic spin-optical properties. We show nearly transform limited photon emission and record spin coherence times for single defects generated via ion implantation and in triangular cross section waveguides. For the latter, we show further controlled operations on nearby nuclear spin qubits, which is crucial for fault-tolerant quantum information distribution.
  arXiv  Detail & Related papers  (2021-09-10T08:42:14Z)
• Room temperature single-photon emitters in silicon nitride [97.75917079876487]
  We report on the first-time observation of room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide substrates. As SiN has recently emerged as one of the most promising materials for integrated quantum photonics, the proposed platform is suitable for scalable fabrication of quantum on-chip devices.
  arXiv  Detail & Related papers  (2021-04-16T14:20:11Z)
• A multiconfigurational study of the negatively charged nitrogen-vacancy center in diamond [55.58269472099399]
  Deep defects in wide band gap semiconductors have emerged as leading qubit candidates for realizing quantum sensing and information applications. Here we show that unlike single-particle treatments, the multiconfigurational quantum chemistry methods, traditionally reserved for atoms/molecules, accurately describe the many-body characteristics of the electronic states of these defect centers.
  arXiv  Detail & Related papers  (2020-08-24T01:49:54Z)
• Entanglement and control of single quantum memories in isotopically engineered silicon carbide [89.42372489576658]
  Nuclear spins in the solid state are both a cause of decoherence and a valuable resource for spin qubits. We demonstrate control of isolated 29Si nuclear spins in silicon carbide (SiC) to create an entangled state between an optically active divacancy spin and a strongly coupled nuclear register.
  arXiv  Detail & Related papers  (2020-05-15T15:45:34Z)

This list is automatically generated from the titles and abstracts of the papers in this site.

This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.