Broad diversity of near-infrared single-photon emitters in silicon
- URL: http://arxiv.org/abs/2010.11068v2
- Date: Fri, 23 Oct 2020 14:44:09 GMT
- Title: Broad diversity of near-infrared single-photon emitters in silicon
- Authors: A. Durand, Y. Baron, W. Redjem, T. Herzig, A. Benali, S. Pezzagna, J.
Meijer, A. Yu. Kuznetsov, J.-M. G\'erard, I. Robert-Philip, M. Abbarchi, V.
Jacques, G. Cassabois, and A. Dr\'eau
- Abstract summary: We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects.
Single photon emission is demonstrated over the [1.1,1.55]-$mu$m range, spanning the O- and C-telecom bands.
- Score: 0.0
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: We report the detection of individual emitters in silicon belonging to seven
different families of optically-active point defects. These fluorescent centers
are created by carbon implantation of a commercial silicon-on-insulator wafer
usually employed for integrated photonics. Single photon emission is
demonstrated over the [1.1,1.55]-$\mu$m range, spanning the O- and C-telecom
bands. We analyse their photoluminescence spectrum, dipolar emission and
optical relaxation dynamics at 10K. For a specific family, we show a constant
emission intensity at saturation from 10K to temperatures well above the
77K-liquid nitrogen temperature. Given the advanced control over
nanofabrication and integration in silicon, these novel artificial atoms are
promising candidates for Si-based quantum technologies.
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