Voltage tunable quantum dot array by patterned Ge-nanowire based
metal-oxide-semiconductor (MOS) devices
- URL: http://arxiv.org/abs/2011.06580v1
- Date: Wed, 11 Nov 2020 11:11:18 GMT
- Title: Voltage tunable quantum dot array by patterned Ge-nanowire based
metal-oxide-semiconductor (MOS) devices
- Authors: Subhrajit Sikdar, Basudev Nag Chowdhury, Rajib Saha and Sanatan
Chattopadhyay
- Abstract summary: fabrication of voltage tunable quantum dots at room temperature.
characterization of quantum confinement of electrons.
characterization of transport properties based on non-equilibrium Green's function (NEGF) formalism.
- Score: 0.0
- License: http://creativecommons.org/licenses/by/4.0/
- Abstract: Semiconductor quantum dots (QDs) are being regarded as the primary unit for a
wide range of advanced and emerging technologies including electronics,
optoelectronics, photovoltaics and biosensing applications as well as the
domain of q-bits based quantum information processing. Such QDs are suitable
for several novel device applications for their unique property of confining
carriers 3-dimensionally creating discrete quantum states. However, the
realization of such QDs in practice exhibits serious challenge regarding their
fabrication in array with desired scalability and repeatability as well as
control over the quantum states at room temperature. In this context, the
current work reports the fabrication of an array of highly scaled Ge-nanowire
(radius ~25 nm) based vertical metal-oxide-semiconductor devices that can
operate as voltage tunable quantum dots at room temperature. The electrons in
such nanowire experience a geometrical confinement in the radial direction,
whereas, they can be confined axially by tuning the applied bias in order to
manipulate the quantum states. Such quantum confinement of electrons has been
confirmed from the step-like responses in the room temperature
capacitance-voltage (C-V) characteristics at relatively low frequency (200
kHz). Each of such steps has observed to encompass convolution of the quantized
states occupying ~6 electronic charges. The details of such carrier confinement
are analyzed in the current work by theoretically modeling the device transport
properties based on non-equilibrium Green's function (NEGF) formalism.
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