Electrical control of uniformity in quantum dot devices
- URL: http://arxiv.org/abs/2211.13493v1
- Date: Thu, 24 Nov 2022 09:32:06 GMT
- Title: Electrical control of uniformity in quantum dot devices
- Authors: Marcel Meyer, Corentin D\'eprez, Timo R. van Abswoude, Dingshan Liu,
Chien-An Wang, Saurabh Karwal, Stefan Oosterhout, Franscesco Borsoi, Amir
Sammak, Nico W. Hendrickx, Giordano Scappucci, and Menno Veldhorst
- Abstract summary: We present a method to electrically obtain a high degree of uniformity in the intrinsic potential landscape.
We demonstrate the tuning of pinch-off voltages in quantum dot devices over hundreds of millivolts.
This work provides a new tool for the tuning of quantum dot devices and offers new perspectives for the implementation of scalable spin qubit arrays.
- Score: 0.0
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: Highly uniform quantum systems are essential for the practical implementation
of scalable quantum processors. While quantum dot spin qubits based on
semiconductor technology are a promising platform for large-scale quantum
computing, their small size makes them particularly sensitive to their local
environment. Here, we present a method to electrically obtain a high degree of
uniformity in the intrinsic potential landscape using hysteretic shifts of the
gate voltage characteristics. We demonstrate the tuning of pinch-off voltages
in quantum dot devices over hundreds of millivolts that then remain stable at
least for hours. Applying our method, we homogenize the pinch-off voltages of
the plunger gates in a linear array for four quantum dots reducing the spread
in pinch-off voltage by one order of magnitude. This work provides a new tool
for the tuning of quantum dot devices and offers new perspectives for the
implementation of scalable spin qubit arrays.
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