Dispersive measurement of a semiconductor double quantum dot via 3D
integration of a high-impedance TiN resonator
- URL: http://arxiv.org/abs/2011.08759v1
- Date: Tue, 17 Nov 2020 16:39:11 GMT
- Title: Dispersive measurement of a semiconductor double quantum dot via 3D
integration of a high-impedance TiN resonator
- Authors: Nathan Holman, D. Rosenberg, D. Yost, J.L. Yoder, R. Das, William D.
Oliver, R. McDermott, M.A. Eriksson
- Abstract summary: One major challenge to scaling quantum dot spin qubits is the dense wiring requirements.
We describe a method to solve this problem by spacing the qubits out using high-impedance superconducting resonators.
This work paves the way for 2D quantum dot qubit arrays with cavity mediated interactions.
- Score: 0.0
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: Spins in semiconductor quantum dots are a candidate for cryogenic quantum
processors due to their exceptionally long coherence times. One major challenge
to scaling quantum dot spin qubits is the dense wiring requirements, making it
difficult to envision fabricating large arrays of nearest-neighbor-coupled
qubits necessary for error correction. We describe a method to solve this
problem by spacing the qubits out using high-impedance superconducting
resonators with a 2D grid unit cell area of $0.16~\text{mm}^2$ using 3D
integration. To prove the viability of this approach, we demonstrate 3D
integration of a high-impedance TiN resonator coupled to a double quantum dot
in a Si/SiGe heterostructure. Using the resonator as a dispersive gate sensor,
we tune the device down to the single electron regime with an SNR = 5.36
limited by the resonator-dot capacitance. Characterization of the dot and
resonator systems shows such integration can be done while maintaining low
charge noise metrics for the quantum dots and with improved loaded quality
factors for the superconducting resonator ($Q_L = 2.14 \times 10^4$), allowing
for high-sensitivity charge detection and the potential for high fidelity
2-qubit gates. This work paves the way for 2D quantum dot qubit arrays with
cavity mediated interactions.
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