Quantum Dot-Based Parametric Amplifiers

• URL: http://arxiv.org/abs/2111.11825v2
• Date: Thu, 2 Dec 2021 15:48:41 GMT
• Title: Quantum Dot-Based Parametric Amplifiers
• Authors: Laurence Cochrane, Theodor Lundberg, David J. Ibberson, Lisa Ibberson, Louis Hutin, Benoit Bertrand, Nadia Stelmashenko, Jason W. A. Robinson, Maud Vinet, Ashwin A. Seshia, M. Fernando Gonzalez-Zalba
• Abstract summary: Josephson parametric amplifiers (JPAs) approaching quantum-limited noise performance have been instrumental in enabling high fidelity readout of superconducting qubits and, recently, semiconductor quantum dots (QDs) We propose that the quantum capacitance arising in electronic two-level systems can provide an alternative dissipation-less non-linear element for parametric amplification. We experimentally demonstrate phase-sensitive parametric amplification using a QD-reservoir electron transition in a CMOS nanowire split-gate transistor embedded in a 1.8GHz superconducting lumped-element microwave cavity.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Josephson parametric amplifiers (JPAs) approaching quantum-limited noise performance have been instrumental in enabling high fidelity readout of superconducting qubits and, recently, semiconductor quantum dots (QDs). We propose that the quantum capacitance arising in electronic two-level systems (the dual of Josephson inductance) can provide an alternative dissipation-less non-linear element for parametric amplification. We experimentally demonstrate phase-sensitive parametric amplification using a QD-reservoir electron transition in a CMOS nanowire split-gate transistor embedded in a 1.8~GHz superconducting lumped-element microwave cavity, achieving parametric gains of -3 to +3 dB, limited by Sisyphus dissipation. Using a semi-classical model, we find an optimised design within current technological capabilities could achieve gains and bandwidths comparable to JPAs, while providing complementary specifications with respect to integration in semiconductor platforms or operation at higher magnetic fields.

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