Pulse-engineered Controlled-V gate and its applications on superconducting quantum device

• URL: http://arxiv.org/abs/2102.06117v3
• Date: Wed, 27 Apr 2022 02:33:44 GMT
• Title: Pulse-engineered Controlled-V gate and its applications on superconducting quantum device
• Authors: Takahiko Satoh, Shun Oomura, Michihiko Sugawara, and Naoki Yamamoto
• Abstract summary: We demonstrate that, by employing OpenPulse design kit for IBM superconducting quantum devices, the controlled-V gate (CV gate) can be implemented in about half the gate time to the controlled-X gate. Using pulse-engineered CV gates enables us to implement these gates with shorter gate time and possibly better gate fidelity than the CX-based one.
• Score: 0.7659943611104243
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: In this paper, we demonstrate that, by employing OpenPulse design kit for IBM superconducting quantum devices, the controlled-V gate (CV gate) can be implemented in about half the gate time to the controlled-X (CX or CNOT gate) and consequently 65.5\% reduced gate time compared to the CX-based implementation of CV. Then, based on the theory of Cartan decomposition, we characterize the set of all two-qubit gates implemented with only two or three CV gates; using pulse-engineered CV gates enables us to implement these gates with shorter gate time and possibly better gate fidelity than the CX-based one, as actually demonstrated in two examples. Moreover, we showcase the improvement of linearly-coupled three-qubit Toffoli gate, by implementing it with the pulse-engineered CV gate, both in gate time and the averaged output-state fidelity. These results imply the importance of our CV gate implementation technique, which, as an additional option for the basis gate set design, may shorten the overall computation time and consequently improve the precision of several quantum algorithms executed on a real device.

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